N-Channel Dual CoolTM 56 PowerTrench? MOSFET 120 V, 92 A, 6.0mΩ

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench? process. Advancements in both silicon and Dual Cool? package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal re ?Dual Cool? Top Side Cooling PQFN package\n? High effciency, low switching loss\n? Max rDS(on) = 6.1 mΩ at VGS = 10 V, ID = 44 A\n? high power density\n?High performance technology for extremely low rDS(on)\n? better reverse recovery performance\n?100% UIL Tested\n?RoHS Compliant;

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/06n12m/marking.html">06N12M；Package：PQFN8；MOSFET - Power, Dualcool N-Channel, PQFN8 120 V, 6.1 m, 92 A

文件：287.73 Kbytes 頁(yè)數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

MOSFET - Power, Single N-Channel

文件：189.08 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

DFN-8

ON

上傳：深圳市寶隆宏業(yè)科技有限公司

SOP8

ON

上傳：深圳市昊創(chuàng)電子有限公司