Power MOSFET, 150V Single N channel 31A, 31m Ohm in Power56 package

This N-Channel MV MOSFET is produced using advanced PowerTrench? process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. ? Shielded Gate MOSFET Technology\n? Optimized for Low RDS-on and Qg\n? Max rDS(on) = 31mΩ at VGS = 10 V, ID = 13 A\n? Low Conduction Loss\n? Max rDS(on) = 36.5 mΩ at VGS = 8 V, ID = 6 A\n? 50% Lower Qrr than other mosfet suppliers\n? Lowers Switching noise /EMI\n? MSL1 Robust Package Design\n? ;

ONSEMI

安森美半導(dǎo)體

MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 31 m, 31 A

文件：223.14 Kbytes 頁(yè)數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

MOSFET - Power, Single N-Channel, Shielded Gate, PowerTrench 150 V, 31 m, 27 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications ? Primary DC?DC MOSFET ? Synchronous Rectifie

文件：329.29 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

SO-8 FL

ON

上傳：深圳市壹芯創(chuàng)科技有限公司

SO-8FL

ON

上傳：深圳市天芯半導(dǎo)體科技有限公司