Power MOSFET 2.3 Amps, 80 Volts

Power MOSFET 2.3 Amps, 80 Volts N?Channel Enhancement?Mode SO?8 Dual Package Features ? Ultra Low On?Resistance Provides Higher Efficiency ? RDS(on) = 0.215Ω, VGS = 10 V ? RDS(on) = 0.245Ω, VGS = 5.0 V ? Low Reverse Recovery Losses ? Internal RG = 50Ω ? Designed for Power Management

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ONSEMI

安森美半導體

Power MOSFET 2.3 Amps, 80 Volts N?Channel Enhancement?Mode SO?8 Dual Package

Power MOSFET 2.3 Amps, 80 Volts\nN?Channel Enhancement?Mode SO?8 Dual Package ? Ultra Low On?Resistance Provides Higher Efficiency\n?? ? RDS(on) = 0.215Ω, VGS = 10 V\n?? ? RDS(on) = 0.245Ω, VGS = 5.0 V\n? Low Reverse Recovery Losses\n? Internal RG = 50Ω\n? Designed for Power Management Solutions in 42 V Automotive\n?? System Applications\n? IDSS and RDS(on) Specified at Eleva;

ONSEMI

安森美半導體

Power MOSFET 2.3 Amps, 80 Volts

ONSEMI

安森美半導體

3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs

The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished

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INTERSIL

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

無錫固電

3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs

The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished

文件：69.22 Kbytes 頁數(shù)：8 Pages

INTERSIL