絲?。?strong>NTF；Package：TSOT23-6FC；Wide Vcc range multi-mode flyback controller

1. General description The NEX8080 device series (NEX8080x) are intelligent multi-mode PWM controller implemented with peak current mode control. As the load changes, it automatically switches between Continuous Conduction Mode (CCM), Quasi-Resonant (QR) mode, Discontinuous Conduction Mode (

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NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/2955/marking.html">2955；Package：SOT223；60V P-CHANNEL ENHANCEMENT MODE MOSFET

Application ● DC-DC Converters. ● Load Switch. ● Power Management.

文件：3.26024 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

絲?。?a target="_blank" title="Marking" href="/3055/marking.html">3055；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.94103 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

絲?。?a target="_blank" title="Marking" href="/3055/marking.html">3055；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.94154 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

-60V P-Channel MOSFET

Features VDS (V) = -60V ID = -7A (VGS = -10V) ID = -6A (VGS = -4.5V) RDS(ON)

文件：562.52 Kbytes 頁數(shù)：7 Pages

EVVOSEMI

翊歐

-60V P-Channel MOSFET

Features VDS (V) = -60V ID = -7A (VGS = -10V) ID = -6A (VGS = -4.5V) RDS(ON)

文件：562.52 Kbytes 頁數(shù)：7 Pages

EVVOSEMI

翊歐

MOSFET – Power, P-Channel, SOT-223 -10 A, -20 V

Features ? Low RDS(on) ? Logic Level Gate Drive ? Diode Exhibits High Speed, Soft Recovery ? Avalanche Energy Specified ? NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable* ? These Devices are Pb?Free

文件：212.98 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

MOSFET – Power, P-Channel, SOT-223 -10 A, -20 V

Features ? Low RDS(on) ? Logic Level Gate Drive ? Diode Exhibits High Speed, Soft Recovery ? Avalanche Energy Specified ? NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable* ? These Devices are Pb?Free

文件：212.98 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

MOSFET – Power, P-Channel, SOT-223 -10 A, -20 V

Features ? Low RDS(on) ? Logic Level Gate Drive ? Diode Exhibits High Speed, Soft Recovery ? Avalanche Energy Specified ? NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable* ? These Devices are Pb?Free

文件：212.98 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

Power MOSFET ??0 V, ??.6 A, Single P??hannel SOT??23

文件：116.08 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導(dǎo)體