Unijunction Transistor (UJT)

Description: The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Absolute Maximum Ratings: (TA = +25°C unless other specified) RMS Power Dissipation, PD . . . . . . . . . . . .

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Bilateral Trigger Diodes (DIACS)

Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover v

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NTE

Bilateral Trigger Diodes (DIACS)

Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover v

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NTE

Bidirectional Thyristor Diodes (SIDAC)

Description: The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance re

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NTE

Bidirectional Thyristor Diodes (SIDAC)

Description: The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance re

文件：17.89 Kbytes 頁數(shù)：2 Pages

NTE

Bi-Polar transistor Selector Guide

NTE

Programmable Unijunction transistor (PUT)

NTE

Programmable Unijunction transistor (PUT)

NTE