| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon Schottky Barrier Rectifier Description: The NTE6081 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: ● Guardiring for Stress Protection ● Low Forward Voltage ● +150°C Operating Junction Temperature ● Guaranteed Reverse Avalanche 文件：19.59 Kbytes 頁數(shù)：2 Pages | NTE | NTE | ||
Silicon Schottky Barrier Rectifier Description: The NTE6082 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: ● Guardiring for Stress Protection ● Low Forward Voltage ● +150°C Operating Junction Temperature 文件：19.62 Kbytes 頁數(shù)：2 Pages | NTE | NTE | ||
Schottky Barrier Rectifier Features: ? Low Power Loss, High Efficiency ? High Current Capability, Low VF ? High Surge Capacity Applications: ? Low Voltage, High Frequency Inverters ? Free Wheeling Applications ? Polarity Protection Applications 文件：19.59 Kbytes 頁數(shù)：2 Pages | NTE | NTE | ||
Silicon Rectifier Schottky Barrier Description: The NTE6084 is a silicon power rectifier in a DO4 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: ● Guardring for Stress Protection ● Low Forward Voltage ● +150°C Operating Junction Temperature Capability ● Guaranteed Reverse A 文件：20.76 Kbytes 頁數(shù)：2 Pages | NTE | NTE | ||
Silicon Dual Schottky Rectifier Description: The NTE6085 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: ● Plastic Package ● Metal to Silicon Rectifier, Majority Carrier Conduction ● Low Power Loss, High Efficiency 文件：21.71 Kbytes 頁數(shù)：2 Pages | NTE | NTE | ||
Silicon Dual Schottky Rectifier Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: 20 Amps Total (10 Amps Pre Diode Leg) Guarding for Stress Protection Low Forward Voltage +150°C Operating 文件：18.46 Kbytes 頁數(shù)：2 Pages | NTE | NTE | ||
Schottky Barrier Silicon Rectifier Features: ● Guarding for Stress Protection ● Low Forward Voltage ● +150°C Operating Junction Temperature ● Guaranteed Reverse Avalanche 文件：18.08 Kbytes 頁數(shù)：2 Pages | NTE | NTE | ||
Silicon Dual Schottky Rectifier Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: 20 Amps Total (10 Amps Pre Diode Leg) Guarding for Stress Protection Low Forward Voltage +150°C Operating 文件：18.46 Kbytes 頁數(shù)：2 Pages | NTE | NTE | ||
Silicon Dual Power Rectifier Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: ● Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range ● Guarding for Stress Pr 文件：20.63 Kbytes 頁數(shù)：2 Pages | NTE | NTE | ||
Silicon Schottky Barrier Rectifier Features: ● Guarding for Stress Protection ● Low Forward Voltage ● +125°C Operating Junction Temperature 文件：18.02 Kbytes 頁數(shù)：2 Pages | NTE | NTE |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
新 |
63 |
全新原裝 貨期兩周 |
詢價(jià) | ||||
NTE |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營-可開原型號增稅票 |
詢價(jià) | ||
2022+ |
59 |
全新原裝 貨期兩周 |
詢價(jià) | ||||
NTE |
23+ |
39596 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | |||
24+ |
N/A |
62000 |
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
NTE |
2023+ |
MODULE |
352 |
主打螺絲模塊系列 |
詢價(jià) | ||
NTE |
25+ |
電聯(lián)咨詢 |
7800 |
公司現(xiàn)貨,提供拆樣技術(shù)支持 |
詢價(jià) |
相關(guān)規(guī)格書
更多- UNE5532
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相關(guān)庫存
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- PS9306L
- PS9307L
- PS9303L2
- PS9331L2
- PS9309L
- PS9324L2
- PS9309L
