Silicon Complementary Transistors High Frequency Driver for Audio Amplifier

Description: The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications. Features: ? DC Current Gain Specified to 4A: hFE = 40 Min @ IC = 3A = 20 MIn @ IC

文件：23.3 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate

Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam

文件：18.72 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate

Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam

文件：18.72 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate

Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam

文件：18.72 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate

Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam

文件：18.72 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate

Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam

文件：18.72 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate

Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam

文件：18.72 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate

Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam

文件：18.72 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate

Description: The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void–free glass–passivated chips and are hermetically sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and w

文件：21.2 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate

Description: The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void–free glass–passivated chips and are hermetically sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and w

文件：21.2 Kbytes 頁數(shù)：2 Pages

NTE