Red Bar Graph Display

Red Bar Graph Display

文件：66.5 Kbytes 頁(yè)數(shù)：1 Pages

NTE

Bar Graph Display

Features: ? Colors: NTE3113 (Red) NTE3114 (Green)

文件：71.21 Kbytes 頁(yè)數(shù)：2 Pages

NTE

Bar Graph Display

Features: ? Colors: NTE3113 (Red) NTE3114 (Green)

文件：71.21 Kbytes 頁(yè)數(shù)：2 Pages

NTE

Bar Graph Display

Description: The NTE3115 (High–Efficiency Red), NTE3116 (High Efficiency Green), and NTE3117 (Yellow) are 10–segment bar graph displays with separate anodes and cathodes for each light segment. The packages are end stackable. Features: Large Segments, Closely Spaced End Stackable

文件：20.27 Kbytes 頁(yè)數(shù)：2 Pages

NTE

Bar Graph Display

Description: The NTE3115 (High–Efficiency Red), NTE3116 (High Efficiency Green), and NTE3117 (Yellow) are 10–segment bar graph displays with separate anodes and cathodes for each light segment. The packages are end stackable. Features: Large Segments, Closely Spaced End Stackable

文件：20.27 Kbytes 頁(yè)數(shù)：2 Pages

NTE

Bar Graph Display

Description: The NTE3115 (High–Efficiency Red), NTE3116 (High Efficiency Green), and NTE3117 (Yellow) are 10–segment bar graph displays with separate anodes and cathodes for each light segment. The packages are end stackable. Features: Large Segments, Closely Spaced End Stackable

文件：20.27 Kbytes 頁(yè)數(shù)：2 Pages

NTE

N-Channel Silicon Junction Field Effect Transistor

Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: ? High Power Gain: 10dB Min at 400MHz ? High Transconductance: 4000 μmho Min at 400MHz ? Low Crss: 1pF Max ? High (Yfs) / Ciss

文件：24.4 Kbytes 頁(yè)數(shù)：3 Pages

NTE

Silicon NPN Phototransistor Detector

Features: ? High Sensitivity ? GaAs LED–Wide Spectral Range, with GaAs LED. ? Low Dark Current ? Side–View Plastic Package

文件：19.74 Kbytes 頁(yè)數(shù)：2 Pages

NTE

Phototransistor Silicon NPN, Narrow Acceptance, High Sensitivity, Darlington

Features: ? Epoxy Resin Package ? Narrow Acceptance: ?θ = ±13° Typ ? High Sensitivity: IC = 1.5mA Min @ Ee = 0.1mW/cm2 ? Visible Light Cut–Off Applications: ? VCRs, Cassette Tape Recorders ? Floppy Disk Drives ? Optoelectronic Switches ? Automatic Stroboscopes

文件：19.14 Kbytes 頁(yè)數(shù)：2 Pages

NTE

Phototransistor Silicon NPN, Intermediate Acceptance, High Sensitivity, Darlington

Features: ? Epoxy Resin Package ? Compact ? Intermediate Acceptance: ?θ = ±40° Typ ? Visible Light Cut–Off Applications: ? VCRs ? Optoelectronic Switches

文件：20.17 Kbytes 頁(yè)數(shù)：2 Pages

NTE