MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.437? Typ ● Lower Leakage Current: 10μA (Max) @ VDS = 400V

文件：24.11 Kbytes 頁(yè)數(shù)：3 Pages

NTE

N-Channel Selector Guide

NTE

Atomic MAP Sensor

文件：2.2066 Mbytes 頁(yè)數(shù)：4 Pages

MALLORY

2.9 – 3.3 GHz 60 W GaN Power Amplifier

Key Features ? Frequency Range: 2.9 – 3.3 GHz ? PSAT (PIN= 27 dBm): 48.8 dBm ? PAE (PIN= 27 dBm): 62 % ? Power Gain (PIN= 27 dBm): 21.8 dB ? Bias: VD = 28 V, IDQ = 680 mA ? Package Dimensions:7.00 x 7.00 x 0.85 mm Performance is typical across frequency. Please reference electrical spe

文件：833.41 Kbytes 頁(yè)數(shù)：20 Pages

QORVO

威訊聯(lián)合

2.9 – 3.3 GHz 60 W GaN Power Amplifier

Key Features ? Frequency Range: 2.9 – 3.3 GHz ? PSAT (PIN= 27 dBm): 48.8 dBm ? PAE (PIN= 27 dBm): 62 % ? Power Gain (PIN= 27 dBm): 21.8 dB ? Bias: VD = 28 V, IDQ = 680 mA ? Package Dimensions:7.00 x 7.00 x 0.85 mm Performance is typical across frequency. Please reference electrical spe

文件：833.41 Kbytes 頁(yè)數(shù)：20 Pages

QORVO

威訊聯(lián)合