MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.308? Typ ● Lower Leakage Current: 10μA (Max) @ VDS = 500V

文件：24.1 Kbytes 頁(yè)數(shù)：3 Pages

NTE

Silicon Complementary Transistors Audio Amplifier and Driver

Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in low–frequency power amplification and drive applications. Features: ● Low Collector–Emitter Saturation Voltage

文件：20.87 Kbytes 頁(yè)數(shù)：2 Pages

NTE

MOSFET N−Channel, Enhancement Mode High Speed Switch

Features: ● Low Static Drain?Source ON Resistance ● Improved Inductive Ruggedness ● Fast Switching Times ● Low Input Capacitance ● Extended Safe Operating Area ● TO220 Type Isolated Package

文件：82.57 Kbytes 頁(yè)數(shù)：3 Pages

NTE

MOSFET N-Ch, Enhancement Mode High Speed Switch

Features: ● Low Static Drain–Source ON Resistance ● Improved Inductive Ruggedness ● Fast Switching Times ● Low Input Capacitance ● Extended Safe Operating Area ● TO220 Type Isolated Package

文件：25.99 Kbytes 頁(yè)數(shù)：3 Pages

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Low Static Drain–Source ON Resistance ● Improved Inductive Ruggedness ● Fast Switching Times ● Low Input Capacitance ● Extended Safe Operating Area ● TO220 Type Isolated Package

文件：25.93 Kbytes 頁(yè)數(shù)：3 Pages

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Low Static Drain–Source ON Resistance ● Improved Inductive Ruggedness ● Fast Switching Times ● Low Input Capacitance ● Extended Safe Operating Area ● TO220 Type Isolated Package

文件：26.06 Kbytes 頁(yè)數(shù)：3 Pages

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Low Static Drain–Source ON Resistance ● Improved Inductive Ruggedness ● Fast Switching Times ● Low Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability ● TO220 Type Isolated Package

文件：25.98 Kbytes 頁(yè)數(shù)：3 Pages

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Low Static Drain–Source ON Resistance ● Improved Inductive Ruggedness ● Fast Switching Times ● Low Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability ● TO220 Type Isolated Package

文件：26 Kbytes 頁(yè)數(shù)：3 Pages

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: Low Static Drain–Source ON Resistance Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability TO220 Type Isolated Package Absolute Maximum Ratings: Drain–Source Voltage (Note

文件：25.98 Kbytes 頁(yè)數(shù)：3 Pages

NTE

Silicon NPN Transistor RF Power Output, Driver

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector–Emitter Voltage (RBE = 150?), VCER . . . . . . . . . . . . . . . . .

文件：20.42 Kbytes 頁(yè)數(shù)：2 Pages

NTE