Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications. Features: ? High DC Current Gain: hFE = 3500 Typ @ IC = 10A ? Monolithic Cons

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NTE

Darlington Transistors

NTE

Silicon Complementary Transistors High Voltage for Video Output

Features: ? High Breakdown Voltage ? Excellent High Frequency Characteristics Applications: ? High Definition CRT Display ? Color TV Chroma Output, High Breakdown Voltage Drivers

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NTE

Silicon Complementary Transistors High Voltage for Video Output

Features: ? High Breakdown Voltage ? Excellent High Frequency Characteristics Applications: ? High Definition CRT Display ? Color TV Chroma Output, High Breakdown Voltage Drivers

文件：21.83 Kbytes 頁數(shù)：2 Pages

NTE

Silicon NPN Transistor High Gain Switch

Features: ? High DC Current Gain ? High Current Capacity ? Low Collector–Emitter Saturation Voltage ? High Emitter–Base Voltage Applications: ? AF Amplifier ? Various Driver

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NTE

Silicon NPN Transistor High Gain Audio Amplifier

Features: ? Large Current Capacity (IC = 2A) ? Adoption of MBIT Process ? High DC Current Gain: hFE = 800 to 3200 ? Low Collector–Emitter Saturation Voltage: VCE(sat)

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NTE

Silicon NPN Transistor Low Frequency, General Purpose Amp

Features: ● High Current Capacity ● High DC Current Gain ● Low Collector Emitter Saturation Voltage ● High Emitter Base Breakdown Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . .. . . . . .

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NTE

Silicon NPN Transistor High Frequency Video Driver

Description: The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the cascode stage of the driver for high–resolution color graphics monitors. Features: High Breakdown Voltage Low Output Capacitance

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NTE

Silicon Complementary Transistors Video Output for HDTV

Features: ? High Gain Bandwidth Product: fT = 500MHz ? High Breakdown Voltage: VCEO = 120V Min ? Low Reverse Transfer Capacitance and Excellent HF Response Applications: ? High–Definition CRT Display Video Output ? Wide–Band Amp

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NTE

Silicon Complementary Transistors Video Output for HDTV

Features: ? High Gain Bandwidth Product: fT = 500MHz ? High Breakdown Voltage: VCEO = 120V Min ? Low Reverse Transfer Capacitance and Excellent HF Response Applications: ? High–Definition CRT Display Video Output ? Wide–Band Amp

文件：21.44 Kbytes 頁數(shù)：2 Pages

NTE