Silicon Complementary Transistors High Voltage Driver

Features: ? High Breakdown Voltage ? Large Current Capacity ? Isolated Package Applications: ? Color TV Audio Output ? Converters ? Inverters

文件：22.51 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: ? High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

文件：26.18 Kbytes 頁數(shù)：3 Pages

NTE

Silicon Complementary Transistors High Voltage Driver

Features: ? High Breakdown Voltage ? Large Current Capacity ? Isolated Package Applications: ? Color TV Audio Output ? Converters ? Inverters

文件：22.51 Kbytes 頁數(shù)：2 Pages

NTE

Silicon NPN Transistor Video Output for HDTV

Features: ? High Gain Bandwidth Product: fT = 400MHz Typ ? High Breakdown Voltage: VCEO ≥ 250V Min ? High Current ? Low Reverse Transfer Capacitance and Excellent HF Response

文件：21.6 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Complementary Transistors High Speed Switch

Features: High Current Capacity High Collector–Emitter Saturation Voltage

文件：23.62 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Complementary Transistors High Speed Switch

Features: High Current Capacity High Collector–Emitter Saturation Voltage

文件：23.62 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Complementary Transistors High Current Switch

Features: ? Low Collector–Emitter Saturation Voltage ? High Current and High fT ? Excellent Linearity of hFE ? Fast Switching Time

文件：22.91 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Complementary Transistors High Current Switch

Features: ? Low Collector–Emitter Saturation Voltage ? High Current and High fT ? Excellent Linearity of hFE ? Fast Switching Time

文件：22.91 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Complementary Transistors High Current Switch

Features: ? Low Collector–Emitter Saturation Voltage ? High Current and High fT ? Excellent Linearity of hFE ? Fast Switching Time

文件：22.88 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Complementary Transistors High Current Switch

Features: ? Low Collector–Emitter Saturation Voltage ? High Current and High fT ? Excellent Linearity of hFE ? Fast Switching Time

文件：22.88 Kbytes 頁數(shù)：2 Pages

NTE