Silicon NPN Transistor Ultra High Frequency Amp

Description: The NTE23 is suitable for a low noise amplifier in the VHF to UHF band. Features: ● Low Noise Figure: NF 3.0dB Typ. @ f = 500MHz ● High Power Gain: Gpe 15dB Typ. @ f = 500MHz ● High Cutoff Frequency: fT = 2.0GHz Typ

文件：20.15 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Controlled Rectifier (SCR) TV Deflection Circuit

Features: ? CTV 110° – CRT Horizontal Deflection ? Tracer Switch

文件：22.76 Kbytes 頁數(shù)：2 Pages

NTE

Silicon NPN Transistor High Voltage, Horizontal Output

Description: The NTE2300 is a silicon NPN transistor in a TO3P type package designed for use in large screen color TV deflection circuits. Features: ? High Breakdown Voltage and High Reliability ? High Switching Speed

文件：21.05 Kbytes 頁數(shù)：2 Pages

NTE

Silicon NPN Transistor High Voltage Horizontal Output

Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: ? Collector–Emitter Voltage: VCEX = 1500V ? Glassivated Base–Collector Junction ? Safe Operating Area @ 50μs = 20A, 400V ? Switchin

文件：22.14 Kbytes 頁數(shù)：2 Pages

NTE

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: ? High Breakdown Voltage and High Reliability ? High Switching Speed ? Capable of Being Mounted in a Variety of Methods

文件：21.35 Kbytes 頁數(shù)：2 Pages

NTE

Silicon NPN Transistor Horizontal Deflection

Description: The NTE2303 is a silicon NPN transistor in a TO220 type package designed for use in small screen black and white deflection circuits. Features: ? Collector–Emitter Voltage: VCEX = 1500V ? Glassivated Base–Collector Junction ? Switching Times with Inductive Loads: tf =

文件：22.24 Kbytes 頁數(shù)：2 Pages

NTE

Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314)

Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications. Features: ? Low Collector–Emitter Saturation Voltage ? Wide ASO and Resist

文件：21.45 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: ? High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

文件：23.7 Kbytes 頁數(shù)：2 Pages

NTE

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: ? High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

文件：23.7 Kbytes 頁數(shù)：2 Pages

NTE

Silicon NPN Transistor High Gain Power Amp

Features: ? High Voltage ? High DC Current Gain ? High Collector Power Dissipation Capability

文件：20.03 Kbytes 頁數(shù)：2 Pages

NTE