Silicon Complementary Transistors General Purpose Output & Driver

Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications such as series, shunt and switching regulators, and low and high frequency inverters and conv

文件：22.55 Kbytes 頁數(shù)：2 Pages

NTE

Complementary Transistors

NTE

Integrated Circuit NMOS, 128K (16K x 8) UV EPROM

Description: The NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be wr

文件：37.71 Kbytes 頁數(shù)：6 Pages

NTE

Integrated Circuit MOS, Static 4K RAM, 300ns

文件：29.02 Kbytes 頁數(shù)：4 Pages

NTE

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes 頁數(shù)：1 Pages

NTE

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes 頁數(shù)：1 Pages

NTE

Integrated Circuit NMOS, 128K (16K x 8) UV EPROM

Description:\nThe NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be writte

NTE

MICROPROCESSOR & MEMORY CIRCUITS (INCLUDES PERIPHERALS)

NTE