Silicon Complementary Transistors General Purpose Output & Driver

Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications such as series, shunt and switching regulators, and low and high frequency inverters and conv

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NTE

Complementary Transistors

Description:\nThe NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications such as series, shunt and switching regulators, and low and high frequency inverters and converte

NTE

Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns

Description: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry. Low threshold silicon gate N–Cha

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NTE

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes 頁(yè)數(shù)：1 Pages

NTE

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes 頁(yè)數(shù)：1 Pages

NTE

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes 頁(yè)數(shù)：1 Pages

NTE

Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns

Description:\nThe NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry.\nLow threshold silicon gate N–Channel t

NTE