Integrated Circuit Dual Audio Power Amp, 5.8W (22W BTL)

Description: The NTE1898 and NTE1899 are dual audio power amplifiers in a 12–Lead SIP type package designed for use as high performance, car–audio power amplifiers in consumer applications. These devices feature high power, low distortion, and low noise along with various types of protection circ

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NTE

Integrated Circuit Dual Audio Power Amp, 5.8W (22W BTL)

Description:\nThe NTE1898 and NTE1899 are dual audio power amplifiers in a 12–Lead SIP type package designed for use as high performance, car–audio power amplifiers in consumer applications. These devices feature high power, low distortion, and low noise along with various types of protection circui

NTE

RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS

DESCRIPTION The SD1899 is a common base silicon NPN bipolar device optimized for 1.6 GHz SATCOM applications. SD1899 offers superior gain and collector efficiency, making it an ideal choice for Class C power amplifiers used in portable as well as fixed SATCOM terminals. ■ REFRACTORY/GOLD METALL

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STMICROELECTRONICS

意法半導(dǎo)體

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1899 is a Common Base Device Designed for class C Applications. FEATURES INCLUDE: ? Gold Metalization ? Input/Output Matching ? Diffused Ballast Resistors

文件：18.08 Kbytes 頁數(shù)：1 Pages

ASI

N-Channel Silicon Junction Field-Effect Transistors

Small Outline (Surface Mount) Package Devices

文件：213.13 Kbytes 頁數(shù)：10 Pages

INTERFET