Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz

Description: The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resi

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NTE

RF transistors

NTE

Polymeric Positive Temperature Coefficient

RESETTABLE CIRCUIT PROTECTION When it comes to Polymeric Positive Temperature Coefficient (PPTC) circuit protection, you now have a choice. Polymeric fuses are made from a conductive plastic formed into thin sheets, with electrodes attached to either side. The conductive plastic is manufactu

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NTE

High frequency secondary rectifier

Description Dual rectifiers suited for switch mode power supply and high frequency DC to DC converters. Packaged in ISOTOP, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies. Features ■ Comb

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STMICROELECTRONICS

意法半導體

HIGH FREQUENCY SECONDARY RECTIFIER

DESCRIPTION Dual rectifiers suited for Switch Mode Power Supplyand high frequencyDC to DC converters. Packagedin ISOTOPTM, this device is intendedfor use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecompower supplies. FEATURES AND BENEFITS

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STMICROELECTRONICS

意法半導體