Integrated Circuit AM−RF Amplifier, Mis, OSC FM−IF Amplifier

Integrated Circuit AM?RF Amplifier, Mis, OSC FM?IF Amplifier

文件：81.82 Kbytes 頁(yè)數(shù)：1 Pages

NTE

Integrated Circuit Audio Power Amplifier, 1W

Integrated Circuit Audio Power Amplifier, 1W

文件：76.31 Kbytes 頁(yè)數(shù)：1 Pages

NTE

Silicon NPN Transistor High Frequency Amplifier

Description: The NTE108 is a silicon NPN transistor in a TO92 type case designed for low–noise, high–frequency amplifiers, 1GHz local oscillatore, non–neutralized IF amplifiers, and non–saturating circuits with rise and fall times less than 2.5ns.

文件：22.9 Kbytes 頁(yè)數(shù)：2 Pages

NTE

Integrated Circuit TV Video Processor

Features: ? For Reverse AGC ? Sufficient Gain and Quieting Sensitivity ? Stable Gain Over the Wide Band ? Small Wave Distortion with AGC

文件：19.33 Kbytes 頁(yè)數(shù)：2 Pages

NTE

Integrated Circuit Audio Power Amplifier, 4.8W

Integrated Circuit Audio Power Amplifier, 4.8W

文件：78.43 Kbytes 頁(yè)數(shù)：1 Pages

NTE

Integrated Circuit FM IF Amplifier

Description: The NTE1082 is a silicon monolithic integrated circuit intended for usa as a three?stage FM IF amplifier having exceptionally high voltage gain and limiting characteristics. From pin 1 the stabilized voltage can be applied to the mixer stage.

文件：77.39 Kbytes 頁(yè)數(shù)：2 Pages

NTE

Integrated Circuit Hybrid, Dual High Gain Pre−Amplifier

Integrated Circuit Hybrid, Dual High Gain Pre?Amplifier

文件：82.74 Kbytes 頁(yè)數(shù)：1 Pages

NTE

Integrated Circuit Low Noise Audio Preamp

Features: ? Low Noise: VNI = 0.8μVrms(Typ) ? High Open Loop Voltage Gain: GVO = 92dB (Typ) ? Low Distortion: THD = 0.1 (Max) at VOUT = 7Vrms, GV = 40dB, f= 1kHz

文件：18.15 Kbytes 頁(yè)數(shù)：2 Pages

NTE

Integrated Circuit Low Noise Preamp

Description: ? General–Purpose Pre–Amplifier ? Voltage Amplifier Application ? Low Noise ? Operates from a Wide Range of Power Supplies ? High Voltage Gain

文件：18 Kbytes 頁(yè)數(shù)：2 Pages

NTE

Germanium Diode Fast Switching General Purpose

Description: The NTE109 is a high conductance device with good switching characteristics for low impedance circuits, high resistance–high conductance for efficient coupling, clamping and matrix service, and forward and inverse pulse recovery for critical pulse applications.

文件：18.86 Kbytes 頁(yè)數(shù)：1 Pages

NTE