| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NTD6416AN | MOSFET – Power, N-Channel 100 V, 17 A, 81 m Features ? Low RDS(on) ? High Current Capability ? 100 Avalanche Tested ? NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant 文件：235.14 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
NTD6416AN | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 81mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：298.72 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
NTD6416AN | N-Channel MOSFET uses advanced SGT technology 文件：2.85426 Mbytes 頁數(shù)：5 Pages | DOINGTER 杜因特 | DOINGTER | |
NTD6416AN | N-Channel Power MOSFET 100 V, 17 A, 81 m 文件：142.81 Kbytes 頁數(shù)：7 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
MOSFET – Power, N-Channel 100 V, 17 A, 81 m Features ? Low RDS(on) ? High Current Capability ? 100 Avalanche Tested ? NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant 文件：235.14 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 81mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：317.13 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
MOSFET – Power, N-Channel 100 V, 17 A, 81 m Features ? Low RDS(on) ? High Current Capability ? 100 Avalanche Tested ? NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant 文件：235.14 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 74mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：298.92 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 74mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：317.36 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N-channel Enhancement Mode Power MOSFET Features ? VDS= 100V, ID= 18.1 A RDS(ON) 文件：1.43471 Mbytes 頁數(shù)：4 Pages | BYCHIP 百域芯 | BYCHIP |
技術(shù)參數(shù)
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Channel Polarity：
N-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
100
- VGS Max (V)：
20
- VGS(th) Max (V)：
4
- ID Max (A)：
17
- PD Max (W)：
71
- RDS(on) Max @ VGS = 10 V(mΩ)：
81
- Qg Typ @ VGS = 10 V (nC)：
20
- Ciss Typ (pF)：
620
- Package Type：
DPAK-3
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO-252 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
ON/安森美 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ON/安森美 |
25+ |
TO-252 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
ON/安森美 |
2022+ |
DPAK-4IP |
12888 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
ON/安森美 |
23+ |
TO-252 |
39000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
ON(安森美) |
23+ |
標(biāo)準(zhǔn)封裝 |
8000 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
ON |
2022+ |
DPAK-3 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
ON(安森美) |
23+ |
標(biāo)準(zhǔn)封裝 |
5000 |
原廠原裝現(xiàn)貨訂貨價(jià)格優(yōu)勢終端BOM表可配單提供樣品 |
詢價(jià) | ||
ON/安森美 |
23+ |
DPAK-3 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價(jià) | ||
ON/安森美 |
20+ |
TO-252 |
300000 |
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝 |
詢價(jià) |
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