| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NTD4805N | MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A Features ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? Optimized Gate Charge to Minimize Switching Losses ? NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable 文件：250.3 Kbytes 頁數(shù)：9 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
NTD4805N | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 95A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：260.06 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
NTD4805N | Power MOSFET 30 V, 88 A, Single N??hannel, DPAK/IPAK 文件：80.75 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A Features ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? Optimized Gate Charge to Minimize Switching Losses ? NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable 文件：250.3 Kbytes 頁數(shù)：9 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 95A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：278.61 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A Features ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? Optimized Gate Charge to Minimize Switching Losses ? NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable 文件：250.3 Kbytes 頁數(shù)：9 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A Features ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? Optimized Gate Charge to Minimize Switching Losses ? NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable 文件：250.3 Kbytes 頁數(shù)：9 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
N-channel Enhancement Mode Power MOSFET Features ? VDS= 30V, ID= 150A RDS(ON) 文件：1.07126 Mbytes 頁數(shù)：5 Pages | BYCHIP 百域芯 | BYCHIP | ||
Power MOSFET 文件：122.57 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Power MOSFET 文件：122.57 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
技術(shù)參數(shù)
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Channel Polarity：
N-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
30
- VGS Max (V)：
20
- VGS(th) Max (V)：
2.5
- ID Max (A)：
88
- PD Max (W)：
2.65
- RDS(on) Max @ VGS = 4.5 V(mΩ)：
7.4
- RDS(on) Max @ VGS = 10 V(mΩ)：
5
- Qg Typ @ VGS = 4.5 V (nC)：
11.3
- Qg Typ @ VGS = 10 V (nC)：
48
- Ciss Typ (pF)：
2865
- Package Type：
DPAK-3
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
TO-252 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
ON |
23+ |
TO-252 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
ON/安森美 |
20+ |
TO-252 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
ON |
25+ |
TO-252/D-PAK |
32500 |
普通 |
詢價 | ||
ON/安森美 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ON/安森美 |
25+ |
TO-252 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ON/安森美 |
2022+ |
TO-252 |
32500 |
原廠代理 終端免費提供樣品 |
詢價 | ||
ON |
21+ |
TO-252 |
10 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
ON |
23+ |
TO-252 |
10 |
正規(guī)渠道,只有原裝! |
詢價 | ||
ON |
2022+ |
DPAK-3 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 |
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