| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NTD25 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS 文件：35 Kbytes 頁數：2 Pages | EDI | EDI | |
P-Channel -30V (D-S) MOSFET PRODUCT SUMMARY VDS (V) = -30V RDS(ON) 文件：408.79 Kbytes 頁數：7 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
MOSFET – Power, P-Channel, Logic Level, DPAK -25 A, -30 V Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source?to?drain diode recovery time is comparable to a discrete fast recovery diode. Features ? S Prefix for Automotive and Other Applications Requiring Uniqu 文件：234.31 Kbytes 頁數：9 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
MOSFET – Power, P-Channel, Logic Level, DPAK -25 A, -30 V Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source?to?drain diode recovery time is comparable to a discrete fast recovery diode. Features ? S Prefix for Automotive and Other Applications Requiring Uniqu 文件：234.31 Kbytes 頁數：9 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/25p03l/marking.html">25P03L；Package：TO-252；P-Channel -30V (D-S) MOSFET PRODUCT SUMMARY VDS (V) = -30V RDS(ON) 文件：408.79 Kbytes 頁數：7 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
P-channel Enhancement Mode Power MOSFET Features ? VDS= -30V, ID= -20A RDS(ON) 文件：679.5 Kbytes 頁數：4 Pages | BYCHIP 百域芯 | BYCHIP | ||
MOSFET – Power, P-Channel, Logic Level, DPAK -25 A, -30 V Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source?to?drain diode recovery time is comparable to a discrete fast recovery diode. Features ? S Prefix for Automotive and Other Applications Requiring Uniqu 文件：234.31 Kbytes 頁數：9 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
Thyristor-Diode Module, 250 Amps 文件：211.51 Kbytes 頁數：3 Pages | NAINA | NAINA | ||
絲?。?a target="_blank" title="Marking" href="/t250n65s3h/marking.html">T250N65S3H；Package：D-PAK；MOSFET - Power, N??hannel, SUPERFET III, FAST 650 V, 250 m, 13 A 文件：353.83 Kbytes 頁數：11 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
Power MOSFET 文件：74.3 Kbytes 頁數：10 Pages | ONSEMI 安森美半導體 | ONSEMI |
技術參數
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Channel Polarity：
P-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
-30
- VGS Max (V)：
15
- VGS(th) Max (V)：
-2
- ID Max (A)：
-25
- PD Max (W)：
75
- RDS(on) Max @ VGS = 4.5 V(mΩ)：
85
- Qg Typ @ VGS = 4.5 V (nC)：
23.6
- Qg Typ @ VGS = 10 V (nC)：
75
- Ciss Typ (pF)：
900
- Package Type：
DPAK-3
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
09+ |
DPAK-3 |
5500 |
原裝無鉛,優(yōu)勢熱賣 |
詢價 | ||
ON |
24+/25+ |
8703 |
原裝正品現貨庫存價優(yōu) |
詢價 | |||
ON |
25+ |
TO-252 |
47 |
百分百原裝正品 真實公司現貨庫存 本公司只做原裝 可 |
詢價 | ||
ON |
24+ |
DPAK |
6000 |
進口原裝正品假一賠十,貨期7-10天 |
詢價 | ||
ON(安森美) |
24+ |
5825 |
公司原廠原裝現貨假一罰十!特價出售!強勢庫存! |
詢價 | |||
ON |
24+ |
DPAK4LEADSingleG |
8866 |
詢價 | |||
ON |
2016+ |
TO252 |
4266 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
ON |
1701+ |
? |
7500 |
只做原裝進口,假一罰十 |
詢價 | ||
ON |
23+ |
TO-252 |
11846 |
一級代理商現貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
ON |
25+23+ |
TO-252 |
19455 |
絕對原裝正品全新進口深圳現貨 |
詢價 |
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