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          首頁(yè) >NTD20N06>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          NTD20N06

          Power MOSFET

          Power MOSFET 20 Amps, 60 Volts, N?Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features ? Pb?Free Packages are Available ? Lower RDS(on) ? Lower VDS(on) ? Lower Capacitances ? Lower Total

          文件:80.12 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTD20N06

          Power MOSFET 20 Amps, 60 Volts, N??hannel DPAK

          MOSFET – Power, N-Channel, DPAK 20 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features ? Lower RDS(on) ? Lower VDS(on) ? Lower Capacitances ? Lower Total Gate Charge ? Lower and Tighter VSD

          文件:162.77 Kbytes 頁(yè)數(shù):7 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTD20N06

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 46mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:259.089 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          NTD20N06

          Power MOSFET 20 Amps, 60 Volts, N??hannel DPAK

          文件:162.77 Kbytes 頁(yè)數(shù):7 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTD20N06

          單 N 溝道功率 MOSFET 60V,20A,46mΩ

          Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ? Lower RDS(on)\n? Lower VDS(on)\n? Lower Capacitances\n? Lower Total Gate Charge\n? Lower and Tighter VSD\n? Lower Diode Reverse Recovery Time\n? Lower Reverse Recovery Stored Charge\n? RoHS Compliant;

          ONSEMI

          安森美半導(dǎo)體

          NTD20N06-1

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 46mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:277.65 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          NTD20N06-1

          Power MOSFET

          Power MOSFET 20 Amps, 60 Volts, N?Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features ? Pb?Free Packages are Available ? Lower RDS(on) ? Lower VDS(on) ? Lower Capacitances ? Lower Total

          文件:80.12 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTD20N06-1G

          Power MOSFET

          Power MOSFET 20 Amps, 60 Volts, N?Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features ? Pb?Free Packages are Available ? Lower RDS(on) ? Lower VDS(on) ? Lower Capacitances ? Lower Total

          文件:80.12 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTD20N06G

          Power MOSFET

          Power MOSFET 20 Amps, 60 Volts, N?Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features ? Pb?Free Packages are Available ? Lower RDS(on) ? Lower VDS(on) ? Lower Capacitances ? Lower Total

          文件:80.12 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTD20N06L

          MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

          Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features ? AEC Q101 Qualified ? NTDV20N06L ? These Devices are Pb?Free and are RoHS Compliant Typical Applications ? Power Supplies ? Converters ? Po

          文件:272.53 Kbytes 頁(yè)數(shù):9 Pages

          ONSEMI

          安森美半導(dǎo)體

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • Halide free:

            H

          • Status:

            Active

          • Channel Polarity:

            N-Channel

          • Configuration:

            Single

          • V(BR)DSS Min (V):

            60

          • VGS Max (V):

            20

          • VGS(th) Max (V):

            4

          • ID Max (A):

            20

          • PD Max (W):

            60

          • RDS(on) Max @ VGS = 10 V(mΩ):

            46

          • Qg Typ @ VGS = 4.5 V (nC):

            16

          • Qg Typ @ VGS = 10 V (nC):

            21

          • Ciss Typ (pF):

            725

          • Package Type:

            DPAK-3

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          更多NTD20N06供應(yīng)商 更新時(shí)間2026-1-21 15:30:00
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