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          首頁(yè) >NTD20>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          NTD20N06LT4G

          MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

          Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features ? AEC Q101 Qualified ? NTDV20N06L ? These Devices are Pb?Free and are RoHS Compliant Typical Applications ? Power Supplies ? Converters ? Po

          文件:272.53 Kbytes 頁(yè)數(shù):9 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTD20N06LT4G

          60V N-Channel MOSFET

          Typical Applications ? Power Supplies ? Converters ? Power Motor Controls ? Bridge Circuits VDS ID (at VGS=10V) RDS(ON) (at VGS=4.5V) 60V 20A

          文件:462.09 Kbytes 頁(yè)數(shù):7 Pages

          UMW

          友臺(tái)半導(dǎo)體

          NTD20N06LT4G

          N-channel Enhancement Mode Power MOSFET

          Features ? VDS= 60V, ID= 30A RDS(ON)

          文件:763.3 Kbytes 頁(yè)數(shù):4 Pages

          BYCHIP

          百域芯

          NTD20N06LT4G

          60V N-Channel MOSFET

          Features VDS 60V ID (at VGS=10V) 20A RDS(ON) (at VGS=4.5V)

          文件:377.04 Kbytes 頁(yè)數(shù):7 Pages

          EVVOSEMI

          翊歐

          NTD20N06T4

          Power MOSFET

          Power MOSFET 20 Amps, 60 Volts, N?Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features ? Pb?Free Packages are Available ? Lower RDS(on) ? Lower VDS(on) ? Lower Capacitances ? Lower Total

          文件:80.12 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTD20N06T4G

          Power MOSFET

          Power MOSFET 20 Amps, 60 Volts, N?Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features ? Pb?Free Packages are Available ? Lower RDS(on) ? Lower VDS(on) ? Lower Capacitances ? Lower Total

          文件:80.12 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTD20P06L

          isc P-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= -15A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= -5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:260.04 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          NTD20P06L-1

          isc P-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= -15A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= -5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:278.59 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          NTD20P06LT4G

          P-channel Enhancement Mode Power MOSFET

          Features ? VDS= -60V, ID= -20A RDS(ON)

          文件:912.35 Kbytes 頁(yè)數(shù):4 Pages

          BYCHIP

          百域芯

          NTD20N03G

          N-Channel 30-V (D-S) MOSFET

          文件:1.01617 Mbytes 頁(yè)數(shù):8 Pages

          VBSEMI

          微碧半導(dǎo)體

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • Halide free:

            H

          • Status:

            Active

          • Channel Polarity:

            N-Channel

          • Configuration:

            Single

          • V(BR)DSS Min (V):

            30

          • VGS Max (V):

            20

          • VGS(th) Max (V):

            2

          • ID Max (A):

            20

          • PD Max (W):

            55.5

          • RDS(on) Max @ VGS = 4.5 V(mΩ):

            29

          • Qg Typ @ VGS = 10 V (nC):

            13.8

          • Ciss Typ (pF):

            1005

          • Package Type:

            DPAK-3

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          更多NTD20供應(yīng)商 更新時(shí)間2026-1-21 9:01:00
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