256Mb DDR Synchronous DRAM

Description NT5DS64M4CT, NT5DS32M8CT and NT5DS16M16CT, NT5DS64M4CS, NT5DS32M8CS and NT5DS16M16CS are 256Mb SDRAM devices based using a DDR interface. They are all based on Nanya’s 110 nm design process. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation.

文件：2.68082 Mbytes 頁數(shù)：76 Pages

NANOAMP

256Mb DDR Synchronous DRAM

Description NT5DS64M4CT, NT5DS32M8CT and NT5DS16M16CT, NT5DS64M4CS, NT5DS32M8CS and NT5DS16M16CS are 256Mb SDRAM devices based using a DDR interface. They are all based on Nanya’s 110 nm design process. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation.

文件：2.68082 Mbytes 頁數(shù)：76 Pages

NANOAMP

256Mb DDR Synchronous DRAM

Description NT5DS64M4CT, NT5DS32M8CT and NT5DS16M16CT, NT5DS64M4CS, NT5DS32M8CS and NT5DS16M16CS are 256Mb SDRAM devices based using a DDR interface. They are all based on Nanya’s 110 nm design process. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation.

文件：2.68082 Mbytes 頁數(shù)：76 Pages

NANOAMP

256Mb DDR Synchronous DRAM

Description NT5DS64M4CT, NT5DS32M8CT and NT5DS16M16CT, NT5DS64M4CS, NT5DS32M8CS and NT5DS16M16CS are 256Mb SDRAM devices based using a DDR interface. They are all based on Nanya’s 110 nm design process. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation.

文件：2.68082 Mbytes 頁數(shù)：76 Pages

NANOAMP