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          NSS1002CL
          絲印：NSS1002G；Package：LFPAK8；Bipolar Transistor 100 V, 2.5 A, Low VCE(sat) NPN Single LFPAK
          
This device is bipolar junction transistor featuring high current, low
saturation voltage, and high speed switching. Suitable for automotive applications. AEC?Q101 qualified and PPAP capable. (NSVS1002CLTWG)

Features
? Complement to NSS1001CL
? Large Current Capacitance
? Low Collector to E
          文件：369.2 Kbytes 頁(yè)數(shù)：7 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NSS1002CLTWG
          絲印：NSS1002G；Package：LFPAK8；Bipolar Transistor 100 V, 2.5 A, Low VCE(sat) NPN Single LFPAK
          
This device is bipolar junction transistor featuring high current, low
saturation voltage, and high speed switching. Suitable for automotive applications. AEC?Q101 qualified and PPAP capable. (NSVS1002CLTWG)

Features
? Complement to NSS1001CL
? Large Current Capacitance
? Low Collector to E
          文件：369.2 Kbytes 頁(yè)數(shù)：7 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NSVS1002CLTWG
          絲印：NSS1002G；Package：LFPAK8；Bipolar Transistor 100 V, 2.5 A, Low VCE(sat) NPN Single LFPAK
          
This device is bipolar junction transistor featuring high current, low
saturation voltage, and high speed switching. Suitable for automotive applications. AEC?Q101 qualified and PPAP capable. (NSVS1002CLTWG)

Features
? Complement to NSS1001CL
? Large Current Capacitance
? Low Collector to E
          文件：369.2 Kbytes 頁(yè)數(shù)：7 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          
            
          
		
          
            
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            更新時(shí)間2026-1-21 10:20:00
        
          
        
          
          
          
            
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