絲印：NSF0412A0；Package：SOT429-2；1200 V, 40 mΩ, N-channel SiC MOSFET

1. General description The NSF040120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in

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NEXPERIA

安世

1200 V, 40 m?, N-channel SiC MOSFET

The NSF040120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage ? Excellent RDSon temperature stability\r\n? Very low switching losses\r\n? Fast reverse recovery\r\n? Fast switching speed\r\n? Temperature independent turn-off switching losses\r\n? Very fast and robust intrinsic body diode;

Nexperia

安世

連接器

JST

JST集團

上傳：洪芯國際半導體（深圳）有限公司

DUB8

NOVOSENSE

上傳：深圳市賽特興科技有限公司

HTSSOP16

TI

德州儀器

上傳：深圳市金芯世紀電子有限公司