Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

文件：231.35 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

文件：231.35 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體

Switch-mode Schottky Power Rectifier

文件：74.18 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導體

Schottky Power Rectifier, Switch-mode, 10 A, 35 V

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, ? Highly Stable Oxide Passivated Junction\n? Guardring for Stress Protection\n? Matched dual die construction - May be Paralleled for High Current Output\n? High dv/dt Capability\n? Short Heat Sink Tap Manufactured - Not Sheared\n? Very Low Forward Voltage Drop\n? Epoxy Meets UL94, VO at 1/8\"Mechan;

ONSEMI

安森美半導體

Switch-mode Schottky Power Rectifier

ONSEMI

安森美半導體

Package：TO-252-3，DPak（2 引線 + 接片），SC-63；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY DPAK

ONSEMI

安森美半導體