SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier These state?of?the?art devices use the Schottky Barrier principle with a proprietary barrier metal. Features ? Dual Diode Construction, May be Paralleled for Higher Current Output ? Guard?Ring for Stress Protection ? Low Forward Voltage Drop ? 125?C Operating Junct

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ONSEMI

安森美半導(dǎo)體

SWITCHMODE Power Rectifier

ONSEMI

安森美半導(dǎo)體

Package：TO-263-3，D2Pak（2 引線 + 接片），TO-263AB；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：LDO REGULATOR, ULTRA-LOW NOISE,

ONSEMI

安森美半導(dǎo)體

Light Emitting Diode (LED) Diffused Red, Blinking

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NTE

HALLOGIC HALL EFFECT SENSORS

[Optek] Description: The OHN3030U and OHS3030U each contain a monolithic integrated circuit which incorporates a Hall element, a linear amplifier, a threshold amplifier, and Schmitt trigger on a single Hallogic? silicon chip. Included on-chip is a band gap voltage regulator to allow operation wi

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Hallogic Hall-effect Sensors

Description: These Hall-effect devices contain a monolithic integrated circuit which incorporates a Hall element, a linear amplifier, a threshold amplifier, and Schmitt trigger on a single Hallogic? silicon chip. Included on-chip is a band gap voltage regulator to allow operation with a wide rang

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OPTEK