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          首頁 >NP8>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NP82N06PLG

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:306.64 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          NP82N10PUF

          MOS FIELD EFFECT TRANSISTOR

          Description The NP82N10PUF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance ? RDS(on) = 15 mΩ MAX. (VGS = 10 V, ID = 41 A) ? Low Ciss: Ciss = 2900 pF TYP. (VDS = 25 V, VGS = 0 V) ? Designed for automotive a

          文件:251.32 Kbytes 頁數(shù):9 Pages

          RENESAS

          瑞薩

          NP82N10PUF

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:306.43 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          NP82N10PUF-E1-AY

          MOS FIELD EFFECT TRANSISTOR

          Description The NP82N10PUF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance ? RDS(on) = 15 mΩ MAX. (VGS = 10 V, ID = 41 A) ? Low Ciss: Ciss = 2900 pF TYP. (VDS = 25 V, VGS = 0 V) ? Designed for automotive a

          文件:251.32 Kbytes 頁數(shù):9 Pages

          RENESAS

          瑞薩

          NP82N10PUF-E2-AY

          MOS FIELD EFFECT TRANSISTOR

          Description The NP82N10PUF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance ? RDS(on) = 15 mΩ MAX. (VGS = 10 V, ID = 41 A) ? Low Ciss: Ciss = 2900 pF TYP. (VDS = 25 V, VGS = 0 V) ? Designed for automotive a

          文件:251.32 Kbytes 頁數(shù):9 Pages

          RENESAS

          瑞薩

          NP82P04PLF

          MOS FIELD EFFECT TRANSISTOR

          SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 8 mΩ MAX. (VGS = ?10 V, ID = ?41 A) RDS(on)2 = 12 mΩ MAX. (VGS = ?4.5 V, ID = ?41 A)

          文件:374.73 Kbytes 頁數(shù):9 Pages

          RENESAS

          瑞薩

          NP82P04PLF

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 8 mΩ MAX. (VGS = ?10 V, ID = ?41 A) RDS(on)2 = 12 mΩ MAX. (VGS = ?4.5 V, ID = ?41 A) ? Low input capacitance Cis

          文件:182.52 Kbytes 頁數(shù):7 Pages

          NEC

          瑞薩

          NP82P04PLF-E1-AY

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 8 mΩ MAX. (VGS = ?10 V, ID = ?41 A) RDS(on)2 = 12 mΩ MAX. (VGS = ?4.5 V, ID = ?41 A) ? Low input capacitance Cis

          文件:182.52 Kbytes 頁數(shù):7 Pages

          NEC

          瑞薩

          NP82P04PLF-E1-AY

          MOS FIELD EFFECT TRANSISTOR

          SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 8 mΩ MAX. (VGS = ?10 V, ID = ?41 A) RDS(on)2 = 12 mΩ MAX. (VGS = ?4.5 V, ID = ?41 A)

          文件:374.73 Kbytes 頁數(shù):9 Pages

          RENESAS

          瑞薩

          NP82P04PLF-E2-AY

          MOS FIELD EFFECT TRANSISTOR

          SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 8 mΩ MAX. (VGS = ?10 V, ID = ?41 A) RDS(on)2 = 12 mΩ MAX. (VGS = ?4.5 V, ID = ?41 A)

          文件:374.73 Kbytes 頁數(shù):9 Pages

          RENESAS

          瑞薩

          技術(shù)參數(shù)

          • ID (A):

            82

          • Downloadable:

            SPICE

          • RDS (ON) (mohm) max. @10V or 8V:

            8.6

          • Nch/Pch:

            N

          • Application:

            Automotive Use

          • Automotive:

            YES

          • Series Name:

            NP Series

          • VDSS (V) max.:

            55

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          NEC
          24+
          TO-262
          8866
          詢價(jià)
          NEC
          TO-263
          22+
          6000
          十年配單,只做原裝
          詢價(jià)
          日本NEC
          23+
          TO-263
          33000
          原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
          詢價(jià)
          NEC
          23+
          TO-263
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          NEC
          1922+
          TO-263
          216
          一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價(jià)
          RENESAS/瑞薩
          23+
          TO-251
          69820
          終端可以免費(fèi)供樣,支持BOM配單!
          詢價(jià)
          24+
          N/A
          56000
          一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
          詢價(jià)
          NEC
          19+
          TO-263
          32000
          原裝正品,現(xiàn)貨特價(jià)
          詢價(jià)
          NEC
          25+
          TO-263
          10000
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          NEC
          22+
          TO-263
          12245
          現(xiàn)貨,原廠原裝假一罰十!
          詢價(jià)
          更多NP8供應(yīng)商 更新時(shí)間2026-1-21 10:03:00
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