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首頁(yè) >NP7>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
NP75N04YUK-E1-AY	文件：282.4 Kbytes Page：8 Pages	40 V – 75 A – N-channel Power MOS FET Application: Automotive Description The NP75N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 3.3 m? MAX. (VGS = 10 V, ID = 38 A) ? Non logic level drive type ? Designed for automotive application and AEC-Q101 qualif 文件：282.4 Kbytes 頁(yè)數(shù)：8 Pages	RENESAS 瑞薩	RENESAS
NP75N04YUK-E2-AY	文件：282.4 Kbytes Page：8 Pages	40 V – 75 A – N-channel Power MOS FET Application: Automotive Description The NP75N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 3.3 m? MAX. (VGS = 10 V, ID = 38 A) ? Non logic level drive type ? Designed for automotive application and AEC-Q101 qualif 文件：282.4 Kbytes 頁(yè)數(shù)：8 Pages	RENESAS 瑞薩	RENESAS
NP75N055YUK	文件：274.51 Kbytes Page：8 Pages	55 V – 75 A – N-channel Power MOS FET Application: Automotive Description The NP75N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 4.5 m? MAX. (VGS = 10 V, ID = 38 A) ? Non logic level drive type ? Designed for automotive application and AEC-Q101 qua 文件：274.51 Kbytes 頁(yè)數(shù)：8 Pages	RENESAS 瑞薩	RENESAS
NP75N055YUK_V01	文件：274.51 Kbytes Page：8 Pages	55 V – 75 A – N-channel Power MOS FET Application: Automotive Description The NP75N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 4.5 m? MAX. (VGS = 10 V, ID = 38 A) ? Non logic level drive type ? Designed for automotive application and AEC-Q101 qua 文件：274.51 Kbytes 頁(yè)數(shù)：8 Pages	RENESAS 瑞薩	RENESAS
NP75N055YUK-E1-AY	文件：274.51 Kbytes Page：8 Pages	55 V – 75 A – N-channel Power MOS FET Application: Automotive Description The NP75N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 4.5 m? MAX. (VGS = 10 V, ID = 38 A) ? Non logic level drive type ? Designed for automotive application and AEC-Q101 qua 文件：274.51 Kbytes 頁(yè)數(shù)：8 Pages	RENESAS 瑞薩	RENESAS
NP75N055YUK-E2-AY	文件：274.51 Kbytes Page：8 Pages	55 V – 75 A – N-channel Power MOS FET Application: Automotive Description The NP75N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 4.5 m? MAX. (VGS = 10 V, ID = 38 A) ? Non logic level drive type ? Designed for automotive application and AEC-Q101 qua 文件：274.51 Kbytes 頁(yè)數(shù)：8 Pages	RENESAS 瑞薩	RENESAS
NP75P03YDG	文件：233.61 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description The NP75P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance ? RDS(on) = 6.2 mΩ MAX. (VGS = ?10 V, ID = ?37.5 A) ? Low Ciss: Ciss = 3200 pF TYP. (VDS = ?25 V, VGS = 0 V) ? Logic level drive type ? 文件：233.61 Kbytes 頁(yè)數(shù)：8 Pages	RENESAS 瑞薩	RENESAS
NP75P03YDG-E1-AY	文件：233.61 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description The NP75P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance ? RDS(on) = 6.2 mΩ MAX. (VGS = ?10 V, ID = ?37.5 A) ? Low Ciss: Ciss = 3200 pF TYP. (VDS = ?25 V, VGS = 0 V) ? Logic level drive type ? 文件：233.61 Kbytes 頁(yè)數(shù)：8 Pages	RENESAS 瑞薩	RENESAS
NP75P03YDG-E2-AY	文件：233.61 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description The NP75P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance ? RDS(on) = 6.2 mΩ MAX. (VGS = ?10 V, ID = ?37.5 A) ? Low Ciss: Ciss = 3200 pF TYP. (VDS = ?25 V, VGS = 0 V) ? Logic level drive type ? 文件：233.61 Kbytes 頁(yè)數(shù)：8 Pages	RENESAS 瑞薩	RENESAS
NP75P04YLG	文件：243.96 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description The NP75P04YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance ? RDS(on) = 9.7 mΩ MAX. (VGS = ?10 V, ID = ?37.5 A) ? RDS(on) = 14 mΩ MAX. (VGS = ?5 V, ID = ?37.5 A) ? Logic level drive type ? Gat 文件：243.96 Kbytes 頁(yè)數(shù)：8 Pages	RENESAS 瑞薩	RENESAS

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詳細(xì)參數(shù)

型號(hào)：
NP7
功能描述：
MOSFET N-CH 40V 70A TO-220
RoHS：
是
類(lèi)別：
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
系列：
-
標(biāo)準(zhǔn)包裝：
1,000
系列：
MESH OVERLAY™ FET
型：
MOSFET N 通道，金屬氧化物 FET
特點(diǎn)：
邏輯電平門(mén)
漏極至源極電壓(Vdss)：
200V 電流 - 連續(xù)漏極(Id) @ 25°
C：
18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25°
C：
180 毫歐 @ 9A，10V Id 時(shí)的
Vgs(th)（最大）：
4V @ 250µA 閘電荷(Qg) @
Vgs：
72nC @ 10V 輸入電容(Ciss) @
Vds：
1560pF @ 25V 功率 -
最大：
40W
安裝類(lèi)型：
通孔
封裝/外殼：
TO-220-3 整包
供應(yīng)商設(shè)備封裝：
TO-220FP
包裝：
管件

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
京海半導(dǎo)體(深圳)有限公司	NP70N04MUG-S18-AY	VB	25+	TO-220	10000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市河鋒鑫科技有限公司	NP70N04MUG-S18-AY	R	22+	TO-220	6000	十年配單,只做原裝	詢價(jià)
現(xiàn)代芯城（深圳）科技有限公司	NP70N04MUG-S18-AY		24+	N/A	75000	一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇	詢價(jià)
深圳市宏捷佳電子科技有限公司	NP70N04MUG-S18-AY	R	25+	TO-TO-220	37650	獨(dú)立分銷(xiāo)商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
深圳市一線半導(dǎo)體有限公司	NP70N10KUF	NEC	24+	TO-263	8866		詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	NP70N10KUF	NEXPERIA/安世	23+	SOT666	69820	終端可以免費(fèi)供樣,支持BOM配單!	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	NP70N10KUF	-	23+	NA	33000	原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市金芯世紀(jì)電子有限公司	NP70N10KUF	RENESAS/瑞薩	22+	TO-263	100000	代理渠道/只做原裝/可含稅	詢價(jià)
深圳市晨豪科技有限公司	NP70N10KUF	RENESAS/瑞薩	23+	TO-263	89630	當(dāng)天發(fā)貨全新原裝現(xiàn)貨	詢價(jià)
深圳市芯皇電子有限公司	NP70N10KUF	RENESAS/瑞薩	22+	TO-263	9000	專(zhuān)業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)	詢價(jià)

更多NP7供應(yīng)商更新時(shí)間2026-1-19 14:06:00

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