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首頁(yè) >NP2>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
NP23N06YDG-E2-AY	文件：226.04 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance ? RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A) ? Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V) ? Logic level drive type ? Des 文件：226.04 Kbytes 頁(yè)數(shù)：8 Pages	RENESAS 瑞薩	RENESAS
NP24N10CLB	文件：239.31 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ?Channel temperature 175 degree rated ? Super low on-state resistance RDS(on)1 = 80 mΩ MAX. (VGS = 10 V, ID = 12 A) RDS(on)2 文件：239.31 Kbytes 頁(yè)數(shù)：10 Pages	RENESAS 瑞薩	RENESAS
NP24N10DLB	文件：239.31 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ?Channel temperature 175 degree rated ? Super low on-state resistance RDS(on)1 = 80 mΩ MAX. (VGS = 10 V, ID = 12 A) RDS(on)2 文件：239.31 Kbytes 頁(yè)數(shù)：10 Pages	RENESAS 瑞薩	RENESAS
NP24N10ELB	文件：239.31 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ?Channel temperature 175 degree rated ? Super low on-state resistance RDS(on)1 = 80 mΩ MAX. (VGS = 10 V, ID = 12 A) RDS(on)2 文件：239.31 Kbytes 頁(yè)數(shù)：10 Pages	RENESAS 瑞薩	RENESAS
NP28N10SDE	文件：299.4 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 28A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 52mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：299.4 Kbytes 頁(yè)數(shù)：2 Pages	ISC 無(wú)錫固電	ISC
NP28N10SDE	文件：984.08 Kbytes Page：8 Pages	N-Channel 100-V (D-S) MOSFET FEATURES ? TrenchFET? Power MOSFETS ? 175 °C Junction Temperature ? Low Thermal Resistance Package 文件：984.08 Kbytes 頁(yè)數(shù)：8 Pages	VBSEMI 微碧半導(dǎo)體	VBSEMI
NP28N10SDE	文件：255.69 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A) ? Low Ciss: Ciss = 2200 pF TYP. (VDS = 2 文件：255.69 Kbytes 頁(yè)數(shù)：8 Pages	RENESAS 瑞薩	RENESAS
NP28N10SDE-E1-AY	文件：255.69 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A) ? Low Ciss: Ciss = 2200 pF TYP. (VDS = 2 文件：255.69 Kbytes 頁(yè)數(shù)：8 Pages	RENESAS 瑞薩	RENESAS
NP28N10SDE-E2-AY	文件：255.69 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A) ? Low Ciss: Ciss = 2200 pF TYP. (VDS = 2 文件：255.69 Kbytes 頁(yè)數(shù)：8 Pages	RENESAS 瑞薩	RENESAS
NP2S	文件：524.47 Kbytes Page：20 Pages	Satellite Zero IF QPSK Tuner IC Description The SL1925 is a wideband quadrature converter operating from 950 to 2150 MHz, intended primarily for application in satellite tuners. The device contains all elements necessary, with the exception of local oscillator sustaining network, to fabricate a high performance I(n-phase) & 文件：524.47 Kbytes 頁(yè)數(shù)：20 Pages	MITEL	MITEL

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技術(shù)參數(shù)

Voltage：
200V
Tolerance：
±20%
Capacitance：
3
Case Size：
051075

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市益百分電子有限公司	NP2803	ROCKWELL	00+	QFP80	1350	全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)	詢(xún)價(jià)
深圳市一線(xiàn)半導(dǎo)體有限公司	NP2511B-1PQ		24+	QFP-128P	28	現(xiàn)貨	詢(xún)價(jià)
深圳市聯(lián)世界科技有限公司	NP2300SCT3G	ON	24+/25+		2500	原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)	詢(xún)價(jià)
深圳市勤思達(dá)科技有限公司	NP22N055SLE-E1	NEC	1415+	TO-252	28500	全新原裝正品,優(yōu)勢(shì)熱賣(mài)	詢(xún)價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	NP2802	RADIANT	23+	TQFP-80	550	專(zhuān)營(yíng)高頻管模塊,全新原裝!	詢(xún)價(jià)
深圳市歐立現(xiàn)代科技有限公司	NP2803	Radiant	24+	TQFP	6980	原裝現(xiàn)貨,可開(kāi)13%稅票	詢(xún)價(jià)
深圳市凌旭科技有限公司	NP23N06YDG-E2-AY	RENESAS	2016+	QFN8	2742	只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!	詢(xún)價(jià)
深圳市鵬和科技有限公司	NP22N055SLE-E1-AY	RENESAS	24+	TO252	5000	全現(xiàn)原裝公司現(xiàn)貨	詢(xún)價(jià)
深圳市海天鴻電子科技有限公司	NP2300SCT3G	ON	1706+	?	7500	只做原裝進(jìn)口,假一罰十	詢(xún)價(jià)
深圳市卓越微芯電子有限公司	NP25L1616256F-7.5	NCP	25+	BGA	5600	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢(xún)價(jià)

更多NP2供應(yīng)商更新時(shí)間2026-1-21 8:01:00

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