絲?。?strong>NP2；Package：SOT353；DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS

Features - Ultra-Small Surface Mount Package - Surface Mount Package Suited for Automated Assembly - Simplifies Circuit Design and Reduces Board Space - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standar

文件：436.05 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導(dǎo)體

-40V – -20A – P-channel Power MOS FET Application : Automotive

Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance : RDS(on) = 25 m? Max. ( VGS = -10 V, ID = -10 A ) RDS(on) = 38 m? Max. ( VGS = -4.5 V, ID = -10 A ) ? Low input capacitance : Ciss = 16

文件：1.33998 Mbytes 頁數(shù)：8 Pages

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isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -20A@ TC=25℃ ·Drain Source Voltage -VDSS= -40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.46 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

-40V – -20A – P-channel Power MOS FET Application : Automotive

Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance : RDS(on) = 25 m? Max. ( VGS = -10 V, ID = -10 A ) RDS(on) = 38 m? Max. ( VGS = -4.5 V, ID = -10 A ) ? Low input capacitance : Ciss = 16

文件：1.33998 Mbytes 頁數(shù)：8 Pages

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瑞薩

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -20A@ TC=25℃ ·Drain Source Voltage -VDSS= -40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.47 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

MOS FIELD EFFECT TRANSISTOR

Product Scout Automotive

文件：307.49 Kbytes 頁數(shù)：9 Pages

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MOS FIELD EFFECT TRANSISTOR

Product Scout Automotive

文件：307.49 Kbytes 頁數(shù)：9 Pages

RENESAS

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MOS FIELD EFFECT TRANSISTOR

Product Scout Automotive

文件：307.49 Kbytes 頁數(shù)：9 Pages

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瑞薩

MOS FIELD EFFECT TRANSISTOR

Description The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS(on) = 47 m? MAX. (VGS = –10 V, ID = –10 A) RDS(on) = 64 m? MAX. (VGS = –5 V, ID = –10 A) RDS(on) = 70 m? MAX. (VGS = –4.5 V, ID = –10 A

文件：126.55 Kbytes 頁數(shù)：8 Pages

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瑞薩

MOS FIELD EFFECT TRANSISTOR

Description The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS(on) = 47 m? MAX. (VGS = –10 V, ID = –10 A) RDS(on) = 64 m? MAX. (VGS = –5 V, ID = –10 A) RDS(on) = 70 m? MAX. (VGS = –4.5 V, ID = –10 A

文件：126.55 Kbytes 頁數(shù)：8 Pages

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