4,194,304-Bit (512K x 8) High Performance CMOS EPROM

General Description The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature on VPP dur

文件：111.1 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

4,194,304-Bit (512K x 8) High Performance CMOS EPROM

ONSEMI

安森美半導(dǎo)體

4,194,304-Bit (512K x 8) High Performance CMOS EPROM

General Description The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature on VPP dur

文件：111.1 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

Package：32-CDIP（0.685"，17.40mm）窗口；包裝：卷帶（TR）剪切帶（CT） 類別：集成電路（IC） 存儲器 描述：IC EPROM 4MBIT PARALLEL 32CDIP

ONSEMI

安森美半導(dǎo)體

Package：32-LCC（J 形引線）；包裝：卷帶（TR）剪切帶（CT） 類別：集成電路（IC） 存儲器 描述：IC EPROM 4MBIT PARALLEL 32PLCC

ONSEMI

安森美半導(dǎo)體

Package：32-LCC（J 形引線）；包裝：卷帶（TR）剪切帶（CT） 類別：集成電路（IC） 存儲器 描述：IC EPROM 4MBIT PARALLEL 32PLCC

ONSEMI

安森美半導(dǎo)體