絲印：NGT；Package：DO-214AA；600W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 600W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.25781 Mbytes 頁(yè)數(shù)：7 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲印：GTB0360RG；Package：DPAK；IGBT 600V, 4.5A, N-Channel

Features ? Reverse Conducting II IGBT ? IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V] ? IGBT tf=75ns (typ) ??Diode VF=1.5V (typ) [IF=3A] ??Diode trr=65ns (typ) ??5?s Short Circuit Capability Applications ? General Purpose Inverter

文件：598.12 Kbytes 頁(yè)數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar

文件：335.53 Kbytes 頁(yè)數(shù)：11 Pages

ONSEMI

安森美半導(dǎo)體

IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar

文件：335.53 Kbytes 頁(yè)數(shù)：11 Pages

ONSEMI

安森美半導(dǎo)體

IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar

文件：289.93 Kbytes 頁(yè)數(shù)：11 Pages

ONSEMI

安森美半導(dǎo)體

IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar

文件：289.93 Kbytes 頁(yè)數(shù)：11 Pages

ONSEMI

安森美半導(dǎo)體

IGBT - Ultra Field Stop

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on?state voltage and minimal switching loss. The IGBT is well suited for UPS and sol

文件：300.02 Kbytes 頁(yè)數(shù)：12 Pages

ONSEMI

安森美半導(dǎo)體

IGBT - Ultra Field Stop

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on?state voltage and minimal switching loss. The IGBT is well suited for UPS and sol

文件：300.02 Kbytes 頁(yè)數(shù)：12 Pages

ONSEMI

安森美半導(dǎo)體

Surface Mount Gas Discharge Tube

文件：295.73 Kbytes 頁(yè)數(shù)：3 Pages

NIC

Surface Mount Gas Discharge Tube

文件：295.73 Kbytes 頁(yè)數(shù)：3 Pages

NIC