| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印:NEZ3;Package:SOT-23;Single Power Supply Single Buffer Gate with 3-State Output CMOS Logic Level Shifter 文件:1.15481 Mbytes 頁數(shù):22 Pages | TI 德州儀器 | TI | ||
絲?。?strong>NEZ3;Package:SOT-23;Single Power Supply Single Buffer Gate with 3-State Output CMOS Logic Level Shifter 文件:1.33215 Mbytes 頁數(shù):25 Pages | TI 德州儀器 | TI | ||
絲印:NEZ3;Package:SOT-23;Single Power Supply Single Buffer Gate with 3-State Output CMOS Logic Level Shifter 文件:1.15481 Mbytes 頁數(shù):22 Pages | TI 德州儀器 | TI | ||
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 ? are designed to provide good flatness of 文件:69.09 Kbytes 頁數(shù):12 Pages | NEC 瑞薩 | NEC | ||
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 ? are designed to provide good flatness of 文件:69.09 Kbytes 頁數(shù):12 Pages | NEC 瑞薩 | NEC | ||
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 ? are designed to provide good flatness of gain and output power in allocated 文件:108.79 Kbytes 頁數(shù):18 Pages | NEC 瑞薩 | NEC | ||
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 ? are designed to provide good flatness of gain and output power in allocated 文件:108.79 Kbytes 頁數(shù):18 Pages | NEC 瑞薩 | NEC | ||
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 ? are designed to provide good flatness of gain and output power in allocated 文件:108.79 Kbytes 頁數(shù):18 Pages | NEC 瑞薩 | NEC | ||
C-BAND POWER GAAS MESFET DESCRIPTION The NEZ C-Band series of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz. FEATURES ● INTERNALLY MATCHED (IN/OUT) ● HIGH Pout (4 W, 8 W, & 15W) ● CLASS A OPERATION 文件:240.12 Kbytes 頁數(shù):6 Pages | NEC 瑞薩 | NEC | ||
C-BAND POWER GAAS MESFET DESCRIPTION The NEZ C-Band series of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz. FEATURES ● INTERNALLY MATCHED (IN/OUT) ● HIGH Pout (4 W, 8 W, & 15W) ● CLASS A OPERATION 文件:240.12 Kbytes 頁數(shù):6 Pages | NEC 瑞薩 | NEC |
詳細參數(shù)
- 型號:
NEZ3
- 制造商:
Texas Instruments
- 功能描述:
IC BUFFER GATE SGL CMOS SOT23-5
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TI/德州儀器 |
25+ |
SOT23-5 |
32360 |
TI/德州儀器全新特價SN74LV1T125DBVR即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
TI |
24+ |
SOT-23-5 |
9800 |
原裝正品優(yōu)勢供應(yīng)支持實單 |
詢價 | ||
TI |
23+ |
SOT-23-5 |
30000 |
全新原裝正品 |
詢價 | ||
TI/德州儀器 |
22+ |
SOT-23-5 |
500000 |
原裝現(xiàn)貨支持實單價優(yōu)/含稅 |
詢價 | ||
TI/德州儀器 |
22+ |
SOT23-5 |
2100 |
詢價 | |||
TI/德州儀器 |
22+ |
SOT23-5 |
30000 |
只做原裝正品 |
詢價 | ||
TI(德州儀器) |
24+ |
SOT-23-5 |
5573 |
只做原裝現(xiàn)貨假一罰十!價格最低!只賣原裝現(xiàn)貨 |
詢價 | ||
TI/德州儀器 |
25+ |
SOT-23-5 |
4987 |
強勢庫存!絕對原裝公司現(xiàn)貨! |
詢價 | ||
T1 |
21+ |
SOT23-5 |
18000 |
原裝現(xiàn)貨、工廠庫存 |
詢價 | ||
TI |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 |
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