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          首頁(yè) >NES1>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          NES1823M-180-A

          GaAs FET 180 W L, S-BAND PUSH-PULL POWER GaAs FET

          DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT- 2000 base station systems. It operates at 12 V and is capable of delivering 180 W of output power (CW) with high linear gain, high efficiency and low distortion. Its primary

          文件:287.57 Kbytes 頁(yè)數(shù):13 Pages

          RENESAS

          瑞薩

          NES1823M-240

          GaAs FET 240 W L, S-BAND PUSH-PULL POWER GaAs FET

          DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT- 2000 base station systems. It operates at 12 V and is capable of delivering 240 W of output power (CW) with high linear gain, high efficiency and low distortion. Its primary

          文件:299.36 Kbytes 頁(yè)數(shù):13 Pages

          RENESAS

          瑞薩

          NES1823M-240-A

          GaAs FET 240 W L, S-BAND PUSH-PULL POWER GaAs FET

          DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT- 2000 base station systems. It operates at 12 V and is capable of delivering 240 W of output power (CW) with high linear gain, high efficiency and low distortion. Its primary

          文件:299.36 Kbytes 頁(yè)數(shù):13 Pages

          RENESAS

          瑞薩

          NES1823M-45

          GaAs FET 45 W L, S-BAND PUSH-PULL POWER GaAs FET

          DESCRIPTION The NES1823M-45 is a 45 W push-pull type GaAs FET designed for high power transmitter applications for IMT- 2000, PCS, and PDC base station systems. It is capable of delivering 45 W of output power (CW) with high linear gain, high efficiency and excellent distortion under the condit

          文件:200.72 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NES1823P-100

          N-CHANNEL GaAs MESFET

          100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear gain, high efficie

          文件:265.63 Kbytes 頁(yè)數(shù):22 Pages

          RENESAS

          瑞薩

          NES1823P-100

          100W L-BAND PUSH-PULL POWER GaAs MESFET

          DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear gain, high efficiency and excellent distortion. Its primary ban

          文件:154.62 Kbytes 頁(yè)數(shù):20 Pages

          NEC

          瑞薩

          NES1823P-140

          140 W L, S-BAND PUSH-PULL POWER GaAs MES FET

          DESCRIPTION The NES1823P-140 is a 140 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 140 W of output power (CW) with high linear gain, high efficiency and excellent distortion under the

          文件:47.6 Kbytes 頁(yè)數(shù):8 Pages

          NEC

          瑞薩

          NES1823P-140

          N-CHANNEL GaAs MES FET

          140 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-140 is a 140 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 140 W of output power (CW) with high linear gain,

          文件:183.91 Kbytes 頁(yè)數(shù):10 Pages

          RENESAS

          瑞薩

          NES1823P-30

          N-CHANNEL GaAs MES FET

          30 W L-S BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power (CW) with high linear gain, high

          文件:188.32 Kbytes 頁(yè)數(shù):10 Pages

          RENESAS

          瑞薩

          NES1823P-30

          30 W L-S BAND PUSH-PULL POWER GaAs MES FET

          DESCRIPTION The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary

          文件:51.62 Kbytes 頁(yè)數(shù):8 Pages

          NEC

          瑞薩

          技術(shù)參數(shù)

          • 輸出電壓:

            750mV~5.5V

          • 輸出電流(最大值):

            30A

          • 輸出路數(shù):

            1

          • 轉(zhuǎn)換效率:

            96%

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          NEC
          24+
          94
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          220
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          Carlo Gavazzi- Inc.
          2022+
          1
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          23+
          TO-59
          8510
          原裝正品代理渠道價(jià)格優(yōu)勢(shì)
          詢(xún)價(jià)
          CARLO
          25+
          繼電器
          96
          就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
          詢(xún)價(jià)
          NEC
          1923+
          原廠封裝
          8600
          萊克訊原廠貨源每一片都來(lái)自原廠原裝現(xiàn)貨薄利多
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          Carlo
          22+
          NA
          65
          加我QQ或微信咨詢(xún)更多詳細(xì)信息,
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          POWER SUPPLY
          25+
          3
          公司優(yōu)勢(shì)庫(kù)存 熱賣(mài)中!
          詢(xún)價(jià)
          NEC
          23+
          27000
          原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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          Lumberg
          2022+
          原廠原包裝
          6800
          全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
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          更多NES1供應(yīng)商 更新時(shí)間2026-1-21 15:30:00
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