P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particular

文件：78.74 Kbytes 頁(yè)數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 30 V (D-S) MOSFET

文件：1.04768 Mbytes 頁(yè)數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

-30V P 溝道邏輯電平增強(qiáng)型場(chǎng)效應(yīng)晶體管

SuperSOT?-3 P溝道邏輯電平增強(qiáng)型場(chǎng)效應(yīng)晶體管采用飛兆專有的高密度DMOS技術(shù)生產(chǎn)而成。 這種密度非常高的工藝是專為最大限度地降低導(dǎo)通阻抗而定制的。 這些器件特別適合筆記本電腦電源管理、便攜電子產(chǎn)品及其他電池供電電路等低電壓應(yīng)用，此類應(yīng)用需要在很小尺寸的表面貼裝封裝中實(shí)現(xiàn)快速高側(cè)開(kāi)關(guān)和低線內(nèi)功率損耗。 ? -1.1 A, -30 VrDS(ON) = 0.3 Ω @ VGS = -4.5 VrDS(ON) = 0.2 Ω @ VGS = -10 V\n? Industry Standard Outline SOT-23 Surface Mount Package Using Proprietary SuperSOT?-3 Design for Superior Thermal and Electrical Capabilities.\n? High Density Cell Design for Extremely Low rDS(ON)\n? Exceptional On-Resistan;

ONSEMI

安森美半導(dǎo)體

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：78.02 Kbytes 頁(yè)數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 20-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Load Switch ? PA Switch ? DC/DC Converters

文件：465.16 Kbytes 頁(yè)數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Neutral Grounding Resistor System , NGR SERIES – US

Description High-resistance grounding prevents many of the problems that are associated with ungrounded and solidly grounded electrical distribution and utilization systems. High-resistance grounding can limit point-of-fault damage, eliminate transient overvoltages, reduce the arc-flash hazar

文件：1.14916 Mbytes 頁(yè)數(shù)：9 Pages

LITTELFUSE

力特