P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast swi

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FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/610t/marking.html">610T；Package：SOT-23；1.7Q ,60V P-Channel MOSFET

Product Summary @ Vdss=60V ? ID=05A @ Rbps(oN)=1.7Q@VGs=-10V

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TECHPUBLIC

臺(tái)舟電子

絲?。?a target="_blank" title="Marking" href="/610/marking.html">610；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

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ONSEMI

安森美半導(dǎo)體

P 溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管，-60V，-0.12A，10Ω

此P溝道增強(qiáng)模式場(chǎng)效應(yīng)晶體管采用飛兆專有的高密度DMOS技術(shù)生產(chǎn)。 這一密度非常高的工藝是專為最大限度地降低通態(tài)電阻，提供穩(wěn)固和可靠的性能以及快速開(kāi)關(guān)而定制的。 NDS0610在要求DC高達(dá)120mA的多數(shù)應(yīng)用中可輕松使用，并且可提供高達(dá)1A的電流。 該產(chǎn)品特別適合需要低電流高邊開(kāi)關(guān)的低電壓應(yīng)用。 ?-0.12 A, -60 V. RDS(ON) = 10 ? @ VGS = -10 V RDS(ON) = 20 ? @ VGS = -4.5 V\n?電壓控制P溝道小信號(hào)開(kāi)關(guān)\n?高密度設(shè)計(jì)可實(shí)現(xiàn)低RDS(ON)\n?高飽和電流;

ONSEMI

安森美半導(dǎo)體

P-Channel 60 V (D-S) MOSFET

文件：986.76 Kbytes 頁(yè)數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體