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          首頁 >NDP706>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NDP7060

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:295.6 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          NDP7060

          N-Channel Enhancement Mode Field Effect Transistor

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

          文件:360.46 Kbytes 頁數(shù):7 Pages

          FAIRCHILD

          仙童半導體

          NDP7060

          N-Channel Enhancement Mode Field Effect Transistor

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wi

          文件:180.74 Kbytes 頁數(shù):9 Pages

          ONSEMI

          安森美半導體

          NDP7060L

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:295.25 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          NDP7060L

          N-Channel Logic Level Enhancement Mode Field Effect Transistor

          General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

          文件:64.959 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導體

          NDP7061

          N-Channel Enhancement Mode Field Effect Transistor

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

          文件:360.13 Kbytes 頁數(shù):7 Pages

          FAIRCHILD

          仙童半導體

          NDP7061

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 64A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:296.6 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          NDP7061L

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:296.19 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          NDP7061L

          N-Channel Logic Level Enhancement Mode Field Effect Transistor

          General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching per

          文件:359.67 Kbytes 頁數(shù):7 Pages

          FAIRCHILD

          仙童半導體

          NDP706A

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:295.61 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • Status:

            Active

          • Channel Polarity:

            N-Channel

          • Configuration:

            Single

          • V(BR)DSS Min (V):

            60

          • VGS Max (V):

            ±20

          • VGS(th) Max (V):

            4

          • ID Max (A):

            75

          • PD Max (W):

            115

          • RDS(on) Max @ VGS = 10 V(mΩ):

            13

          • Qg Typ @ VGS = 4.5 V (nC):

            3.7

          • Qg Typ @ VGS = 10 V (nC):

            100

          • Ciss Typ (pF):

            2960

          • Package Type:

            TO-220-3

          供應(yīng)商型號品牌批號封裝庫存備注價格
          onsemi
          25+
          TO-220
          21000
          正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
          詢價
          FSC
          24+
          3000
          公司存貨
          詢價
          ON
          25+
          TO-263
          18000
          原廠直接發(fā)貨進口原裝
          詢價
          FSC/NS
          17+
          TO-220
          6200
          詢價
          NATIONALSEM
          24+
          原裝進口原廠原包接受訂貨
          190
          原裝現(xiàn)貨假一罰十
          詢價
          FSC
          16+
          TO-220
          10000
          全新原裝現(xiàn)貨
          詢價
          ONSemiconductor
          24+
          NA
          3000
          進口原裝正品優(yōu)勢供應(yīng)
          詢價
          FAICHILD
          23+
          TO-220
          35000
          專做原裝正品,假一罰百!
          詢價
          FAIRCHILD
          25+23+
          TO220
          7889
          絕對原裝正品全新進口深圳現(xiàn)貨
          詢價
          三年內(nèi)
          1983
          只做原裝正品
          詢價
          更多NDP706供應(yīng)商 更新時間2026-1-20 23:00:00
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