N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

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FAIRCHILD

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

N-Channel 60-V (D-S) MOSFET

文件：979.22 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThese N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withs ■ 75A, 50V. RDS(ON) = 0.013W @ VGS=10V.\n■ Critical DC electrical parameters specified at elevated temperature.\n■ Rugged internal source-drain diode can eliminate the need\n?? for an external Zener diode transient suppressor.\n■ 175°C maximum junction temperature rating.\n■ High density cell design;

ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：294.99 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：64.41 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

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