N-Channel Enhancement Mode Field Effect Transistor

General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 45mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無(wú)錫固電

Reflective Object Sensor

Description The OPB608 consists of an infrared emitting diode and an NPN silicon phototransistor mounted “side-by-side” on a parallel axis in a black opaque plastic housing. Features ? Phototransistor output ? Unfocused for sensing diffuse surface ? Low cost plastic housing ? Enhanced signal

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OPTEK

Reflective Object Sensor

Features: ? Phototransistor output ? Unfocused for sensing diffuse surface ? Low cost plastic housing ? Enhanced signal to noise ratio ? Reduced ambient light sensitivity Description: OPB608 reflective switches consist of an infrared emitting device (LED or VCSEL) and a NPN silicon phototra

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TTELEC

REFLECTIVE OBJECT SENSORS

The OPB608 is a reflective switch that consist of an infrared emitting device (LED or VCSEL) and an NPN silicon phototransistor mounted “side-by-side” on a parallel axis in a black opaque plastic housing. Both the emitting device and phototransistor are encapsulated in a visible filtering epoxy ex

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OPTEK