P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching p

文件：167.43 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -24A@ TC=25℃ ·Drain Source Voltage -VDSS= -20V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：289.56 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

P-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? Load Switch ? Notebook Adaptor Switch

文件：1.73735 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 46A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.17 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：357.86 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：56.6 Kbytes 頁數(shù)：4 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：357.86 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 52A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.72 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：56.6 Kbytes 頁數(shù)：4 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：65.7 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體