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                >NCV8440>規(guī)格書列表
                
          
            
          
                
          
                    
          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          NCV8440
          Protected Power MOSFET 2.6 A, 52 V, N?Channel, Logic Level, Clamped MOSFET w/ ESD Protection
          
Features
? Diode Clamp Between Gate and Source
? ESD Protection ? Human Body Model 5000 V
? Active Over?Voltage Gate to Drain Clamp
? Scalable to Lower or Higher RDS(on)
? Internal Series Gate Resistance
? These are Pb?Free Devices
Benefits
? High Energy Capability for Inductive Loads
? L
          文件：173.41 Kbytes 頁數(shù)：9 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NCV8440
          Protected Power MOSFET 2.6 A, 52 V, N??hannel, Logic Level, Clamped MOSFET w/ ESD Protection
          文件：154.27 Kbytes 頁數(shù)：8 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NCV8440
          Protected Power MOSFET
          文件：89.91 Kbytes 頁數(shù)：9 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NCV8440
          箝位 MOSFET，N 溝道，帶 ESD 保護(hù)
          NCV8440 是一款帶保護(hù) N 溝道功率 MOSFET。保護(hù)功能包括用于過電壓保護(hù)的集成式漏極-門極箝位。  ? Diode Clamp Between Gate and Source\n? Active Overvoltage Gate to Drain Clamp\n? Internal Series Gate Resistance;
          ONSEMI
          安森美半導(dǎo)體
          

          NCV8440_V01
          Protected Power MOSFET 2.6 A, 52 V, N?Channel, Logic Level, Clamped MOSFET w/ ESD Protection
          
Features
? Diode Clamp Between Gate and Source
? ESD Protection ? Human Body Model 5000 V
? Active Over?Voltage Gate to Drain Clamp
? Scalable to Lower or Higher RDS(on)
? Internal Series Gate Resistance
? These are Pb?Free Devices
Benefits
? High Energy Capability for Inductive Loads
? L
          文件：173.41 Kbytes 頁數(shù)：9 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NCV8440A
          Protected Power MOSFET 2.6 A, 52 V, N?Channel, Logic Level, Clamped MOSFET w/ ESD Protection
          
Features
? Diode Clamp Between Gate and Source
? ESD Protection ? Human Body Model 5000 V
? Active Over?Voltage Gate to Drain Clamp
? Scalable to Lower or Higher RDS(on)
? Internal Series Gate Resistance
? These are Pb?Free Devices
Benefits
? High Energy Capability for Inductive Loads
? L
          文件：173.41 Kbytes 頁數(shù)：9 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NCV8440ASTT1G
          Protected Power MOSFET 2.6 A, 52 V, N?Channel, Logic Level, Clamped MOSFET w/ ESD Protection
          
Features
? Diode Clamp Between Gate and Source
? ESD Protection ? Human Body Model 5000 V
? Active Over?Voltage Gate to Drain Clamp
? Scalable to Lower or Higher RDS(on)
? Internal Series Gate Resistance
? These are Pb?Free Devices
Benefits
? High Energy Capability for Inductive Loads
? L
          文件：173.41 Kbytes 頁數(shù)：9 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NCV8440ASTT3G
          Protected Power MOSFET 2.6 A, 52 V, N?Channel, Logic Level, Clamped MOSFET w/ ESD Protection
          
Features
? Diode Clamp Between Gate and Source
? ESD Protection ? Human Body Model 5000 V
? Active Over?Voltage Gate to Drain Clamp
? Scalable to Lower or Higher RDS(on)
? Internal Series Gate Resistance
? These are Pb?Free Devices
Benefits
? High Energy Capability for Inductive Loads
? L
          文件：173.41 Kbytes 頁數(shù)：9 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NCV8440STT1G
          Protected Power MOSFET 2.6 A, 52 V, N?Channel, Logic Level, Clamped MOSFET w/ ESD Protection
          
Features
? Diode Clamp Between Gate and Source
? ESD Protection ? Human Body Model 5000 V
? Active Over?Voltage Gate to Drain Clamp
? Scalable to Lower or Higher RDS(on)
? Internal Series Gate Resistance
? These are Pb?Free Devices
Benefits
? High Energy Capability for Inductive Loads
? L
          文件：173.41 Kbytes 頁數(shù)：9 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NCV8440STT3G
          Protected Power MOSFET 2.6 A, 52 V, N?Channel, Logic Level, Clamped MOSFET w/ ESD Protection
          
Features
? Diode Clamp Between Gate and Source
? ESD Protection ? Human Body Model 5000 V
? Active Over?Voltage Gate to Drain Clamp
? Scalable to Lower or Higher RDS(on)
? Internal Series Gate Resistance
? These are Pb?Free Devices
Benefits
? High Energy Capability for Inductive Loads
? L
          文件：173.41 Kbytes 頁數(shù)：9 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Pb-free：
            Pb
          • AEC Qualified：
            A
          • Halide free：
            H
          • PPAP Capablee：
            P
          • Status：
            Active
          • Channel Polarity：
            N-Channel
          • V(BR)DSS Min (V)：
            52
          • ID Typ (A)：
            2.6
          • rDS(on) Max (mΩ)：
            95
          • PD Max (W)：
            1.69
          • Package Type：
            SOT-223-4/TO-261-4D
          
            
          
        
          
            
          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          
                
          



          ON
          		

          23+
          		

          SOT-223
          		

          11846
          		

          一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          		
詢價(jià)
          

          



          ONSEMI/安森美
          		

          24+
          		

          TO223
          		

          60000
          		

          		
詢價(jià)
          

          



          ON
          		

          24+
          		

          SOT-223(TO-261)4L
          		

          8866
          		

          		
詢價(jià)
          

          



          		

          三年內(nèi)
          		

          		

          1983
          		

          只做原裝正品
          		
詢價(jià)
          

          



          ON
          		

          20+
          		

          SOT-223
          		

          11520
          		

          特價(jià)全新原裝公司現(xiàn)貨
          		
詢價(jià)
          

          



          ON/安森美
          		

          25+
          		

          SOT-223
          		

          18000
          		

          全新原裝現(xiàn)貨,假一賠十
          		
詢價(jià)
          

          



          		

          24+
          		

          		

          37200
          		

          原裝現(xiàn)貨/放心購買
          		
詢價(jià)
          

          



          ON Semiconductor
          		

          2010+
          		

          N/A
          		

          6000
          		

          加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
          		
詢價(jià)
          

          



          ON(安森美)
          		

          2447
          		

          8-SOIC
          		

          115000
          		

          4000個(gè)/圓盤一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
          		
詢價(jià)
          

          



          ON/安森美
          		

          21+
          		

          SOT-223
          		

          30000
          		

          優(yōu)勢(shì)供應(yīng) 實(shí)單必成 可開增值稅13點(diǎn)
          		
詢價(jià)
          

            
          
        
          
        
          更多NCV8440供應(yīng)商
            更新時(shí)間2026-1-20 14:08:00
        
          
        
          
          
          
            
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