Single 2 A High-Speed, Low-Side Gate Driver

The NCP51100 2 A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications by providing high peak current pulses during the short switching intervals. The driver is available with TTL input thresholds. Internal circuitry provides an under-voltage lockout ? 3 A Peak Sink/Source at VDD = 12 V\n? High current capability\n? 4.5 to 18 V Operating Range\n? 2.5 A Sink / 1.8 A Source at Vout = 6 V\n? Dual-Logic Inputs Allow Configuration as Non-Inverting or Inverting with Enable Function\n? Internal Resistors Turn Driver Off If No Inputs\n? 14ns Typical Ris;

ONSEMI

安森美半導(dǎo)體

Single 2 A High-Speed, Low-Side Gate Driver

文件：2.22143 Mbytes 頁數(shù)：16 Pages

ONSEMI

安森美半導(dǎo)體

Package：SC-74A，SOT-753；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 柵極驅(qū)動器 描述：SINGLE 2 A HIGH-SPEED, LOW-SIDE

ONSEMI

安森美半導(dǎo)體

Multi Purpose Transformers

文件：30.34 Kbytes 頁數(shù)：1 Pages

RHOMBUS-IND

3-A SINK/SOURCE DDR TERMINATION REGULATOR

文件：704.11 Kbytes 頁數(shù)：20 Pages

TI

德州儀器

3-A SINK/SOURCE DDR TERMINATION REGULATOR

文件：704.11 Kbytes 頁數(shù)：20 Pages

TI

德州儀器