N溝道 MOSFET

\n The NCE8050A uses advanced trench technology and design to provide excellent R DS(ON) ?with low gate charge. It can be used in a wide variety of applications. \n? V DS =80V,I D =50A\nR DS(ON) < 16m? @ V GS =10V (Typ:13m?)\n? High density cell design for ultra low Rdson\n? Fully characterized avalanche voltage and current\n? Good stability and uniformity with high E AS\n? Excellent package for good heat dissipation\n? Special process technology for high ES;

NCEPower

新潔能

N溝道 MOSFET

\n The NCE8050AK uses advanced trench technology and design to provide excellent R DS(ON) ?with low gate charge. It can be used in a wide variety of applications. \n? V DS =80V,I D =50A\nR DS(ON) < 16m? @ V GS =10V (Typ:13m?)\n? High density cell design for ultra low Rdson\n? Fully characterized avalanche voltage and current\n? Good stability and uniformity with high E AS\n? Excellent package for good heat dissipation\n? Special process technology for high ES;

NCEPower

新潔能

Silicon NPN Triple Diffuse High Voltage Transistor

Features ? Silicon NPN Triple diffuse type ? Excellent DC current gain characteristics ? Low Saturation Voltage ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standard

文件：293.84 Kbytes 頁數(shù)：5 Pages

PANJIT

強(qiáng)茂

NPN-PNP General Purpose Complementary Amplifiers & Output Drivers

NPN-PNP General Purpose Complementary Amplifiers & Output Drivers

文件：349.74 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

10/100 BASE-T QUAD SMD TRANSFOMER MODULES

文件：40.59 Kbytes 頁數(shù)：1 Pages

PMI