絲印：NCE40P40D；Package：TO-263-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE40P40D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-40V,ID =-40A RDS(ON)

文件：299.38 Kbytes 頁數(shù)：7 Pages

NCEPOWER

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12-150V P-Channel Trench MOSFET

\n The NCE40P40D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. \n? V DS =-40V,I D =-40A\nR DS(ON) <14m? @ V GS =-10V\n? High density cell design for ultra low Rdson\n? Fully characterized avalanche voltage and current\n? Good stability and uniformity with high E AS\n? Excellent package for good heat dissipation;

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P-Channel 40 V (D-S) MOSFET

文件：1.07826 Mbytes 頁數(shù)：9 Pages

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微碧半導(dǎo)體

NCE P-Channel Enhancement Mode Power MOSFET

文件：477.05 Kbytes 頁數(shù)：7 Pages

NCEPOWER

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P-channel Enhancement Mode Power MOSFET

Features VDS= -40V, ID= -40A RDS(ON)

文件：984.89 Kbytes 頁數(shù)：5 Pages

BYCHIP

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