| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NCE3400 | N-Channel 30-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? DC/DC Converter 文件：483.24 Kbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | |
NCE3400 | NCE N-Channel Enhancement Mode Power MOSFET 文件：332.68 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | |
NCE3400 | 12-200V N-Channel Trench MOSFET The NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. | NCEPower 新潔能 | NCEPower | |
絲?。?a target="_blank" title="Marking" href="/3400e/marking.html">3400E；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3400E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. It is ESD protested. General Features ● VDS = 30 文件：243.55 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/3400x/marking.html">3400X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3400X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.1A RDS(ON) 文件：303.47 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/3400xy/marking.html">3400XY；Package：SOT23-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3400XY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.1A RDS(ON) 文件：283.15 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
N-Channel 30-V (D-S) MOSFET 文件：1.025859 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
絲?。?a target="_blank" title="Marking" href="/3400a/marking.html">3400A；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET 文件：286.71 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/3400ay/marking.html">3400AY；Package：SOT23-3L；N-Channel Enhancement Mode Power MOSFET 文件：284.88 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
12-200V N-Channel Trench MOSFET The NCE3400AY uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a?Battery protection or in other Switching application. | NCEPower 新潔能 | NCEPower |
技術(shù)參數(shù)
- Product status：
Production
- Package：
SOT-23
- Polarity：
P
- BVDSS(V)：
30
- ID(A)：
5.8
- VTH(V)：
0.9
- RDS(ON)@10VTyp(mΩ)：
22
- RDS(ON)@10VMax(mΩ)：
35
- RDS(ON)@4.5VTyp(mΩ)：
24
- RDS(ON)@4.5VMax(mΩ)：
41
- RDS(ON)@2.5VTyp(mΩ)：
28
- RDS(ON)@2.5VMax(mΩ)：
57
- VGS(th)(V)：
±12
- CISS(pF)：
820
- QG(nC)：
9.5
- PD(W)：
1.4
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NCE/新潔能 |
25+ |
SOT23 |
32360 |
NCE/新潔能全新特價NCE3400即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
NCE/新潔能 |
2021+ |
原廠原封裝 |
93628 |
原裝進(jìn)口現(xiàn)貨 假一罰百 |
詢價 | ||
NCE/新潔能 |
21+ |
SOT-23 |
8080 |
只做原裝,質(zhì)量保證 |
詢價 | ||
NCE/新潔能 |
24+ |
SOT-23 |
120000 |
全新原裝現(xiàn)貨特價銷售,歡迎來電查詢 |
詢價 | ||
NCE新潔能 |
2430+ |
SOT-23 |
8540 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
NCEPOWER |
2025+ |
SOT-23 |
5000 |
原裝進(jìn)口價格優(yōu) 請找坤融電子! |
詢價 | ||
NCE原裝 |
25+23+ |
SOT23-3 |
28413 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
NCE |
19+ |
SOT-23 |
999999 |
只做原裝正品 |
詢價 | ||
NCE |
18+ |
SOT-23 |
41200 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
NCEPOWER |
18+ |
SOT-23 |
15000 |
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十 |
詢價 |
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