12-200V N-Channel Trench MOSFET

\n The NCE3134 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application. \n? V DS = 20V,I D =0.75A\nR DS(ON) <380m? @ V GS =4.5V\nR DS(ON) < 450m? @ V GS =2.5V\nR DS(ON) < 800m? @ V GS =1.8V\n? High power and current handing capability\n? Lead free product is acquired\n? Surface mount package;

NCEPower

新潔能

絲?。?a target="_blank" title="Marking" href="/3134/marking.html">3134；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

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NCEPOWER

新潔能

4 A Integrated Synchronous Buck Converter

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ONSEMI

安森美半導體

4 A Integrated Synchronous Buck Converter

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ONSEMI

安森美半導體

Light Emitting Diode, 1.8mm

Features: ? NTE3134 Super Yellow ? NTE3137 Super Red

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NTE