絲印：2301FX；Package：SOT-23；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -2 A RDS(ON)

文件：266.56 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

P-Channel 20-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Load Switch ? PA Switch ? DC/DC Converters

文件：465.3 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

12-150V P-Channel Trench MOSFET

\n The NCE2301F uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. \n? V DS = -20V,I D = -2 A\nR DS(ON) < 150m? @ V GS =-2.5V\nR DS(ON) < 120m? @ V GS =-4.5V\n? High power and current handing capability\n? Lead free product is acquired\n? Surface mount package;

NCEPower

新潔能

CLASS A 2.3 GHZ 15 VOLT POWER TRANSISTOR

DESCRIPTION AND APPLICATIONS This L-band linear power transistor series incorporates a Pt-Si/Ti/Pt/Au metallization system, emitter ballasting and silicon nitride passivation for performance and reliability. Avariety of hermetic packages and a plastic package are available for wide band amplifier

文件：225.85 Kbytes 頁數(shù)：7 Pages

NEC

瑞薩

P-CHANNEL ENHANCEMENT-MODE MOSFETS

文件：3.46421 Mbytes 頁數(shù)：8 Pages

NIUHANG

紐航電子

SOT-23 Plastic-Encapsulate MOSFETS

Features TrenchFET Power MOSFET

文件：1.46628 Mbytes 頁數(shù)：5 Pages

DGNJDZ

南晶電子