絲?。?a target="_blank" title="Marking" href="/nce2090k/marking.html">NCE2090K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =90A RDS(ON)

文件：359.75 Kbytes 頁數(shù)：7 Pages

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絲?。?a target="_blank" title="Marking" href="/20np1006s/marking.html">20NP1006S；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET

Description The NCE20NP1006S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 20V,ID =10A RDS(ON)

文件：417.93 Kbytes 頁數(shù)：10 Pages

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絲印：NCE20P05J；Package：DFN2X2-6L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P05J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -20V,ID = -5A RDS(O

文件：737.65 Kbytes 頁數(shù)：7 Pages

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絲?。?a target="_blank" title="Marking" href="/20p05y/marking.html">20P05Y；Package：SOT23-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P05Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -5A RDS(ON)

文件：298.56 Kbytes 頁數(shù)：7 Pages

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絲印：20P07N；Package：SOT23-6L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P07N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-7A RDS(ON)

文件：282.46 Kbytes 頁數(shù)：7 Pages

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絲?。?a target="_blank" title="Marking" href="/nce20p08j/marking.html">NCE20P08J；Package：NCE20P08J；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P08J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -20V,ID = -8A RDS(O

文件：726.29 Kbytes 頁數(shù)：7 Pages

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絲?。?a target="_blank" title="Marking" href="/20p10j/marking.html">20P10J；Package：DFN2X2-6L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P10J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -20V,ID = -10A RDS(ON)

文件：259.45 Kbytes 頁數(shù)：7 Pages

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絲?。?a target="_blank" title="Marking" href="/20p85gu/marking.html">20P85GU；Package：DFN5x6-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P85GU uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Load switch ● Battery protection General Features ● VDS =-20V,ID =-85A RDS(ON)

文件：287.49 Kbytes 頁數(shù)：6 Pages

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絲?。?a target="_blank" title="Marking" href="/to-220/marking.html">TO-220；Package：NCE20TD60B；600V, 20A, Trench FS II

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat)

文件：1.10389 Mbytes 頁數(shù)：7 Pages

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絲?。?a target="_blank" title="Marking" href="/to-263/marking.html">TO-263；Package：NCE20TD60BD；600V, 20A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology Offering ? Very low VCE(sat)

文件：966.03 Kbytes 頁數(shù)：7 Pages

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